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二维半导体中单个局域缺陷的耦合发射到表面等离激元极化激元上。

Coupling Emission from Single Localized Defects in Two-Dimensional Semiconductor to Surface Plasmon Polaritons.

机构信息

Joint Quantum Institute, University of Maryland and the National Institute of Standards and Technology , College Park, Maryland 20742, United States.

出版信息

Nano Lett. 2017 Nov 8;17(11):6564-6568. doi: 10.1021/acs.nanolett.7b02222. Epub 2017 Oct 10.

Abstract

Coupling of an atom-like emitter to surface plasmons provides a path toward significant optical nonlinearity, which is essential in quantum information processing and quantum networks. A large coupling strength requires nanometer-scale positioning accuracy of the emitter near the surface of the plasmonic structure, which is challenging. We demonstrate the coupling of single localized defects in a tungsten diselenide (WSe) monolayer self-aligned to the surface plasmon mode of a silver nanowire. The silver nanowire induces a strain gradient on the monolayer at the overlapping area, leading to the formation of localized defect emission sites that are intrinsically close to the surface plasmon. We measured an average coupling efficiency with a lower bound of 26% ± 11% from the emitter into the plasmonic mode of the silver nanowire. This technique offers a way to achieve efficient coupling between plasmonic structures and localized defects of two-dimensional semiconductors.

摘要

原子型发射器与表面等离激元的耦合为显著的光学非线性提供了途径,这对于量子信息处理和量子网络是至关重要的。大的耦合强度需要发射器在等离子体结构表面附近的纳米级定位精度,这是具有挑战性的。我们展示了在银纳米线的表面等离激元模式下自对准的二硒化钨(WSe)单层中单点局域缺陷的耦合。银纳米线在重叠区域引起单层上的应变梯度,导致局域缺陷发射位点的形成,这些位点本质上接近表面等离激元。我们从发射器到银纳米线的等离子体模式测量了平均耦合效率,下限为 26%±11%。这项技术为实现等离子体结构和二维半导体局域缺陷之间的高效耦合提供了一种途径。

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