Electrochemical Materials Science Laboratory, DICAM, Palermo University, Palermo, 90128, Italy.
IPIT and Department of Physics, Chonbuk National University, Jeonju, 54896, South Korea.
Adv Mater. 2017 Nov;29(43). doi: 10.1002/adma.201703357. Epub 2017 Oct 6.
Redox-based resistive switching memories (ReRAMs) are strongest candidates for the next-generation nonvolatile memories fulfilling the criteria for fast, energy efficient, and scalable green IT. These types of devices can also be used for selector elements, alternative logic circuits and computing, and memristive and neuromorphic operations. ReRAMs are composed of metal/solid electrolyte/metal junctions in which the solid electrolyte is typically a metal oxide or multilayer oxides structures. Here, this study offers an effective and cheap electrochemical approach to fabricate Ta/Ta O -based devices by anodizing. This method allows to grow high-quality and dense oxide thin films onto a metallic substrates with precise control over morphology and thickness. Electrochemical-oxide-based devices demonstrate superior properties, i.e., endurance of at least 10 pulse cycles and/or 10 I-V sweeps maintaining a good memory window with a low dispersion in R and R values, nanosecond fast switching, and data retention of at least 10 s. Multilevel programing capability is presented with both I-V sweeps and pulse measurements. Thus, it is shown that anodizing has a great prospective as a method for preparation of dense oxide films for resistive switching memories.
基于氧化还原的电阻式随机存取存储器（ReRAM）是下一代非易失性存储器的最佳候选者，符合快速、节能和可扩展的绿色 IT 标准。这些类型的设备也可用于选择元件、替代逻辑电路和计算，以及忆阻和神经形态操作。ReRAM 由金属/固体电解质/金属结组成，其中固体电解质通常是金属氧化物或多层氧化物结构。在这里，本研究提供了一种有效且廉价的电化学方法，通过阳极氧化来制造 Ta/Ta O 基器件。该方法允许在金属基底上生长高质量和高密度的氧化物薄膜，并且可以精确控制形态和厚度。基于电化学氧化的器件表现出优异的性能，例如，至少 10 个脉冲循环和/或 10 个 I-V 扫描的耐久性，保持良好的记忆窗口，R 和 R 值的分散性低，纳秒快速开关，以及至少 10 s 的数据保持。通过 I-V 扫描和脉冲测量都展示了多电平编程能力。因此，证明了阳极氧化作为制备电阻式随机存取存储器的致密氧化物薄膜的一种很有前途的方法。
