Liu Kai, Jiang Wengui, Zhou Liang, Zhou Yinkang, Hu Minghui, Geng Yuchen, Zhang Yiyuan, Qiao Yi, Wang Rongming, Sun Yinghui
Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China.
The State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, China.
Nanomaterials (Basel). 2025 Jul 3;15(13):1033. doi: 10.3390/nano15131033.
Two-dimensional (2D) material-based resistive random-access memory (RRAM) has emerged as a promising solution for neuromorphic computing and computing-in-memory architectures. Compared to conventional metal-oxide-based RRAM, the novel 2D material-based RRAM devices demonstrate lower power consumption, higher integration density, and reduced performance variability, benefiting from their atomic-scale thickness and ultra-flat surfaces. Remarkably, 2D layered metal oxides retain these advantages while preserving the merits of traditional metal oxides, including their low cost and high environmental stability. Through a multi-step dry transfer process, we fabricated a Pd-MoO-Ag RRAM device featuring 2D α-MoO as the resistive switching layer, with Pd and Ag serving as inert and active electrodes, respectively. Resistive switching tests revealed an excellent operational stability, low write voltage (0.5 V), high switching ratio (>10), and multi-bit storage capability (≥3 bits). Nevertheless, the device exhibited a limited retention time (2000 s). To overcome this limitation, we developed a Gr-MoO-Ag heterostructure by substituting the Pd electrode with graphene (Gr). This modification achieved a fivefold improvement in the retention time (>10 s). These findings demonstrate that by controlling the type and thickness of 2D materials and resistive switching layers, RRAM devices with both high On/Off ratios and long-term data retention may be developed.
基于二维（2D）材料的电阻式随机存取存储器（RRAM）已成为神经形态计算和内存计算架构的一种有前景的解决方案。与传统的基于金属氧化物的RRAM相比，新型的基于2D材料的RRAM器件展现出更低的功耗、更高的集成密度以及更低的性能可变性，这得益于其原子尺度的厚度和超平坦的表面。值得注意的是，二维层状金属氧化物在保留传统金属氧化物的优点（包括低成本和高环境稳定性）的同时，还保留了这些优势。通过多步干法转移工艺，我们制备了一种Pd-MoO-Ag RRAM器件，其以二维α-MoO作为电阻开关层，Pd和Ag分别作为惰性电极和活性电极。电阻开关测试显示出优异的操作稳定性、低写入电压（约0.5 V）、高开关比（>10）和多位存储能力（≥3位）。然而，该器件的保持时间有限（约2000 s）。为了克服这一限制，我们通过用石墨烯（Gr）替代Pd电极开发了一种Gr-MoO-Ag异质结构。这种改进使保持时间提高了五倍（>10 s）。这些发现表明，通过控制二维材料和电阻开关层的类型和厚度，可以开发出具有高开/关比和长期数据保持能力的RRAM器件。
