Liao Zhongfa, Wagner S J, Alam M Z, Tolstikhin V, Stewart Aitchison J
Opt Lett. 2017 Oct 15;42(20):4167-4170. doi: 10.1364/OL.42.004167.
We report on the demonstration of a spot size converter (SSC) for monolithic photonic integration at a wavelength of 850 nm on a GaAs substrate. We designed and fabricated a dual-waveguide AlGaAs chip. The design consists of a lower waveguide layer for efficient end-fire coupling to a single-mode fiber, an upper waveguide layer for high refractive index contrast waveguides, and a vertical SSC to connect the two waveguide layers. We measured a SSC conversion efficiency of 91% (or -0.4 dB) between the upper and lower waveguide layers for the TE mode at a wavelength of 850 nm.
我们报道了一种用于在砷化镓衬底上进行850纳米波长单片光子集成的光斑尺寸转换器(SSC)的演示。我们设计并制造了一个双波导AlGaAs芯片。该设计包括一个用于与单模光纤进行高效端射耦合的下部波导层、一个用于高折射率对比度波导的上部波导层以及一个连接两个波导层的垂直SSC。我们测量了在850纳米波长下,TE模式在上部和下部波导层之间的SSC转换效率为91%(或-0.4分贝)。