MacLaren Ian, Annand Kirsty J, Black Colin, Craven Alan J
School of Physics and Astronomy, University of Glasgow, Glasgow G12 8QQ, UK.
Microscopy (Oxf). 2018 Mar 1;67(suppl_1):i78-i85. doi: 10.1093/jmicro/dfx036.
Electron energy-loss spectroscopy (EELS) has been investigated in the range from 2 to >10 keV using an optimized optical coupling of the microscope to the spectrometer to improve the high loss performance in EELS. It is found that excellent quality data can now be acquired up until about 5 keV, suitable for both energy loss near edge structure (ELNES) studies of oxidation and local chemistry, and potentially useful for extended energy loss fine structure (EXELFS) studies of local atomic ordering. Examples studied included oxidation in Zr, Mo and Sn, and the ELNES and EXELFS of the Ti-K edge. It is also shown that good quality electron energy-loss spectroscopy can even be performed for losses above 9.2 keV, the energy loss at which the collection angle becomes 'infinite', and this is demonstrated using the tungsten L3 edge at about 10.2 keV.
利用显微镜与光谱仪之间优化的光学耦合，在2至大于10 keV的能量范围内对电子能量损失谱（EELS）进行了研究，以提高EELS中的高损失性能。结果发现，现在可以获取质量优异的数据，直至约5 keV，这些数据既适用于氧化和局部化学的能量损失近边结构（ELNES）研究，也可能对局部原子有序化的扩展能量损失精细结构（EXELFS）研究有用。研究的示例包括Zr、Mo和Sn中的氧化，以及Ti-K边的ELNES和EXELFS。研究还表明，即使对于高于9.2 keV（此时收集角变为“无限大”）的能量损失，也可以进行高质量的电子能量损失谱分析，这在约10.2 keV处的钨L3边得到了验证。
