• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

通过硫钝化显著提高砷化铟纳米线的热导率。

Significantly enhanced thermal conductivity of indium arsenide nanowires via sulfur passivation.

作者信息

Xiong Yucheng, Tang Hao, Wang Xiaomeng, Zhao Yang, Fu Qiang, Yang Juekuan, Xu Dongyan

机构信息

Department of Mechanical and Automation Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong Special Administrative Region, China.

School of Mechanical Engineering and Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments, Southeast University, Nanjing, 210096, China.

出版信息

Sci Rep. 2017 Oct 16;7(1):13252. doi: 10.1038/s41598-017-13792-4.

DOI:10.1038/s41598-017-13792-4
PMID:29038573
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5643329/
Abstract

In this work, we experimentally investigated the effect of sulfur passivation on thermal transport in indium arsenide (InAs) nanowires. Our measurement results show that thermal conductivity can be enhanced by a ratio up to 159% by sulfur passivation. Current-voltage (I-V) measurements were performed on both unpassivated and S-passivated InAs nanowires to understand the mechanism of thermal conductivity enhancement. We observed a remarkable improvement in electrical conductivity upon sulfur passivation and a significant contribution of electrons to thermal conductivity, which account for the enhanced thermal conductivity of the S-passivated InAs nanowires.

摘要

在这项工作中,我们通过实验研究了硫钝化对砷化铟(InAs)纳米线热输运的影响。我们的测量结果表明,通过硫钝化,热导率可提高高达159%。对未钝化和硫钝化的InAs纳米线都进行了电流-电压(I-V)测量,以了解热导率增强的机制。我们观察到硫钝化后电导率有显著提高,并且电子对热导率有重大贡献,这解释了硫钝化的InAs纳米线热导率增强的原因。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ad3d/5643329/7366c21f0bb3/41598_2017_13792_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ad3d/5643329/13f30c327aa2/41598_2017_13792_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ad3d/5643329/f91258c2c2ef/41598_2017_13792_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ad3d/5643329/bcb9c2d64c4d/41598_2017_13792_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ad3d/5643329/80ae6f948da0/41598_2017_13792_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ad3d/5643329/7366c21f0bb3/41598_2017_13792_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ad3d/5643329/13f30c327aa2/41598_2017_13792_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ad3d/5643329/f91258c2c2ef/41598_2017_13792_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ad3d/5643329/bcb9c2d64c4d/41598_2017_13792_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ad3d/5643329/80ae6f948da0/41598_2017_13792_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ad3d/5643329/7366c21f0bb3/41598_2017_13792_Fig5_HTML.jpg

相似文献

1
Significantly enhanced thermal conductivity of indium arsenide nanowires via sulfur passivation.通过硫钝化显著提高砷化铟纳米线的热导率。
Sci Rep. 2017 Oct 16;7(1):13252. doi: 10.1038/s41598-017-13792-4.
2
Enhanced luminescence properties of InAs nanowires via organic and inorganic sulfide passivation.通过有机和无机硫化物钝化增强InAs纳米线的发光特性。
Nanotechnology. 2019 Nov 1;30(44):445704. doi: 10.1088/1361-6528/ab3742.
3
Wet-chemical passivation of InAs: toward surfaces with high stability and low toxicity.砷化铟的湿法化学钝化:实现高稳定性和低毒性表面。
Acc Chem Res. 2012 Sep 18;45(9):1451-9. doi: 10.1021/ar200282f. Epub 2012 Jun 20.
4
Role of molecular surface passivation in electrical transport properties of InAs nanowires.分子表面钝化在砷化铟纳米线电输运性质中的作用
Nano Lett. 2008 Jan;8(1):49-55. doi: 10.1021/nl071888t. Epub 2007 Dec 4.
5
Photoluminescence model of sulfur passivated p-InP nanowires.硫钝化 p-InP 纳米线的光致发光模型。
Nanotechnology. 2012 Aug 10;23(31):315703. doi: 10.1088/0957-4484/23/31/315703. Epub 2012 Jul 13.
6
Modulating Electrical Properties of InAs Nanowires via Molecular Monolayers.通过分子单层调节 InAs 纳米线的电学性能。
ACS Nano. 2015 Jul 28;9(7):7545-52. doi: 10.1021/acsnano.5b02745. Epub 2015 Jun 22.
7
Contactless Optical Characterization of Carrier Dynamics in Free-Standing InAs-InAlAs Core-Shell Nanowires on Silicon.硅衬底上独立的 InAs-InAlAs 核壳纳米线中载流子动力学的无接触光学特性研究。
Nano Lett. 2019 Feb 13;19(2):990-996. doi: 10.1021/acs.nanolett.8b04226. Epub 2019 Jan 23.
8
Robust Epitaxial Al Coating of Reclined InAs Nanowires.直立倾斜砷化铟纳米线的强韧外延铝涂层。
Nano Lett. 2017 Dec 13;17(12):7520-7527. doi: 10.1021/acs.nanolett.7b03444. Epub 2017 Nov 14.
9
Full thermoelectric characterization of InAs nanowires using MEMS heater/sensors.使用微机电系统加热器/传感器对砷化铟纳米线进行完整的热电特性表征。
Nanotechnology. 2014 Aug 1;25(30):305702. doi: 10.1088/0957-4484/25/30/305702. Epub 2014 Jul 9.
10
Diameter dependence of the thermal conductivity of InAs nanowires.砷化铟纳米线热导率的直径依赖性
Nanotechnology. 2015 Sep 25;26(38):385401. doi: 10.1088/0957-4484/26/38/385401. Epub 2015 Sep 2.

本文引用的文献

1
Modulating Electrical Properties of InAs Nanowires via Molecular Monolayers.通过分子单层调节 InAs 纳米线的电学性能。
ACS Nano. 2015 Jul 28;9(7):7545-52. doi: 10.1021/acsnano.5b02745. Epub 2015 Jun 22.
2
Thermoelectric characterization of individual bismuth selenide topological insulator nanoribbons.单个硒化铋拓扑绝缘体纳米带的热电特性
Nanoscale. 2015 Apr 21;7(15):6683-90. doi: 10.1039/c5nr00917k.
3
Single InAs nanowire room-temperature near-infrared photodetectors.单根 InAs 纳米线室温近红外光电探测器。
ACS Nano. 2014 Apr 22;8(4):3628-35. doi: 10.1021/nn500201g. Epub 2014 Mar 7.
4
Tunable electronic transport properties of metal-cluster-decorated III-V nanowire transistors.金属团簇修饰的 III-V 纳米线晶体管的可调谐电子输运性质。
Adv Mater. 2013 Aug 27;25(32):4445-51. doi: 10.1002/adma.201301362. Epub 2013 Jun 20.
5
Wet-chemical passivation of InAs: toward surfaces with high stability and low toxicity.砷化铟的湿法化学钝化:实现高稳定性和低毒性表面。
Acc Chem Res. 2012 Sep 18;45(9):1451-9. doi: 10.1021/ar200282f. Epub 2012 Jun 20.
6
Removal of surface states and recovery of band-edge emission in InAs nanowires through surface passivation.通过表面钝化去除 InAs 纳米线中的表面态并恢复带边发射。
Nano Lett. 2012 Jul 11;12(7):3378-84. doi: 10.1021/nl300015w. Epub 2012 Jun 7.
7
Measurement of the intrinsic thermal conductivity of a multiwalled carbon nanotube and its contact thermal resistance with the substrate.测量多壁碳纳米管的本征热导率及其与基底的接触热阻。
Small. 2011 Aug 22;7(16):2334-40. doi: 10.1002/smll.201100429. Epub 2011 Jun 7.
8
Parallel array InAs nanowire transistors for mechanically bendable, ultrahigh frequency electronics.平行阵列 InAs 纳米线晶体管,用于机械可弯曲的超高频率电子器件。
ACS Nano. 2010 Oct 26;4(10):5855-60. doi: 10.1021/nn1018329.
9
Gas detection with vertical InAs nanowire arrays.利用垂直砷化铟纳米线阵列进行气体检测。
Nano Lett. 2010 Jul 14;10(7):2412-5. doi: 10.1021/nl1005405.
10
InAs nanowire transistors as gas sensor and the response mechanism.砷化铟纳米线晶体管作为气体传感器及其响应机制。
Nano Lett. 2009 Dec;9(12):4348-51. doi: 10.1021/nl902611f.