State Key Laboratory for Mechanical Behavior of Materials and Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China. Shenzhen Key Laboratory of Thermoelectric Materials, Department of physics, South University of Science and Technology of China, Shenzhen 518055, People's Republic of China.
Nanotechnology. 2017 Nov 10;28(45):455707. doi: 10.1088/1361-6528/aa8b29. Epub 2017 Oct 17.
Lead-free IV-VI semiconductors SnQ (Q = Te, Se, S) are deemed as promising thermoelectric (TE) materials. In this work, we designed a hydrothermal route to selectively synthesize single phase SnTe, SnSe and SnS nanopowders. For all three samples, the phase structure were characterized by x-ray diffraction, SnTe particles with octahedron structure and SnSe/SnS particles with plate-like shape were observed by field emission scanning electron microscopy and transmission electron microscopy, the formation mechanism was discussed in detail. Then, SnTe, SnSe and SnS nanopowders were densified by spark plasma sintering for investigating TE properties. It was noticed that SnSe and SnS exhibited remarkably anisotropy in both electrical and thermal properties attributed to the layered crystal structure. The highest ZT values 0.79 at 873 K, 0.21 at 773 K, and 0.13 at 773 K were achieved for SnTe, SnSe and SnS bulk samples, respectively.
无铅 IV-VI 族半导体 SnQ(Q=Te、Se、S)被认为是很有前途的热电(TE)材料。在这项工作中,我们设计了一种水热路线来选择性地合成单相 SnTe、SnSe 和 SnS 纳米粉末。对于所有三种样品,通过 X 射线衍射对其相结构进行了表征,通过场发射扫描电子显微镜和透射电子显微镜观察到具有八面体结构的 SnTe 颗粒和具有板状形状的 SnSe/SnS 颗粒,详细讨论了其形成机制。然后,通过火花等离子烧结使 SnTe、SnSe 和 SnS 纳米粉末致密化,以研究其 TE 性能。值得注意的是,SnSe 和 SnS 由于其层状晶体结构,在电学和热学性能上表现出明显的各向异性。在 873 K 时,SnTe、SnSe 和 SnS 块体样品的最大 ZT 值分别为 0.79、0.21 和 0.13;在 773 K 时,最大 ZT 值分别为 0.79、0.21 和 0.13。