Catalonia Energy Research Institute - IREC, Sant Adria de Besòs, 08930 Barcelona, Spain.
Dalton Trans. 2019 Mar 12;48(11):3641-3647. doi: 10.1039/c8dt04414g.
We report the thermoelectric performance of p-type nanocrystalline SnSe obtained from the liquid phase sintering of blends of SnSe nanocrystals and Te nanorods. A cycled hot press procedure at a temperature above the Te melting point promoted the formation of crystallographically textured SnSe nanomaterials with relative densities up to 93%. After consolidation, part of this Te was found within the SnSe lattice and part remained as elemental Te between the SnSe grains. The presence of Te during the SnSe consolidation resulted in SnSe nanomaterials with higher electrical conductivities and lower Seebeck coefficients and thermal conductivities. By adjusting the amount of Te, thermoelectric figures of merit (ZT) up to 1.4 at 790 K were measured in the direction of the uniaxial pressure, coinciding with the preferential a crystallographic axis. While this value matches the highest ZT value reported at this temperature for SnSe in the [100] crystal direction, the ZT values of the consolidated SnSe along the bc plane were relatively lower due to moderately low thermal conductivities in this plane.
我们报告了通过 SnSe 纳米晶和 Te 纳米棒混合物的液相烧结获得的 p 型纳米晶 SnSe 的热电性能。在高于 Te 熔点的温度下进行循环热压处理,促进了具有高达 93%相对密度的晶向织构化 SnSe 纳米材料的形成。在固结后,部分 Te 被发现存在于 SnSe 晶格中,部分 Te 以元素 Te 的形式存在于 SnSe 晶粒之间。在 SnSe 固结过程中存在 Te,导致 SnSe 纳米材料具有更高的电导率和更低的 Seebeck 系数和热导率。通过调整 Te 的量,在 790 K 时,在单轴压力方向上测量到高达 1.4 的热电优值(ZT),与优先的 a 晶轴一致。虽然这个值与在 [100] 晶向方向上报道的 SnSe 在该温度下的最高 ZT 值相匹配,但由于在该平面上的热导率适中较低,沿 bc 平面固结的 SnSe 的 ZT 值相对较低。