Kort-Kamp W J M
Center for Nonlinear Studies and Theoretical Division, Los Alamos National Laboratory, MS B258, Los Alamos, New Mexico 87545, USA.
Phys Rev Lett. 2017 Oct 6;119(14):147401. doi: 10.1103/PhysRevLett.119.147401. Epub 2017 Oct 4.
The recent synthesis of two-dimensional staggered materials opens up burgeoning opportunities to study optical spin-orbit interactions in semiconducting Dirac-like systems. We unveil topological phase transitions in the photonic spin Hall effect in the graphene family materials. It is shown that an external static electric field and a high frequency circularly polarized laser allow for active on-demand manipulation of electromagnetic beam shifts. The spin Hall effect of light presents a rich dependence with radiation degrees of freedom, and material properties, and features nontrivial topological properties. We discover that photonic Hall shifts are sensitive to spin and valley properties of the charge carriers, providing an unprecedented pathway to investigate spintronics and valleytronics in staggered 2D semiconductors.
近期二维交错材料的合成,为研究类半导体狄拉克系统中的光学自旋轨道相互作用带来了蓬勃发展的机遇。我们揭示了石墨烯家族材料中光子自旋霍尔效应的拓扑相变。结果表明,外部静电场和高频圆偏振激光能够实现对电磁束位移的主动按需操控。光的自旋霍尔效应呈现出对辐射自由度和材料特性的丰富依赖关系,并具有非平凡的拓扑性质。我们发现光子霍尔位移对电荷载流子的自旋和能谷特性敏感,这为研究交错二维半导体中的自旋电子学和能谷电子学提供了一条前所未有的途径。