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二维狄拉克材料中的反常霍尔效应。

Anomalous Hall Effect in 2D Dirac Materials.

机构信息

Department of Physics, University of York, York YO10 5DD, United Kingdom.

出版信息

Phys Rev Lett. 2018 Sep 21;121(12):126802. doi: 10.1103/PhysRevLett.121.126802.

Abstract

We present a unified theory of charge carrier transport in 2D Dirac systems with broken mirror inversion and time-reversal symmetries (e.g., as realized in ferromagnetic graphene). We find that the entanglement between spin and pseudospin SU(2) degrees of freedom stemming from spin-orbit effects leads to a distinctive gate voltage dependence (change of sign) of the anomalous Hall conductivity approaching the topological gap, which remains robust against impurity scattering and thus is a smoking gun for magnetized 2D Dirac fermions. Furthermore, we unveil a robust skew scattering mechanism, modulated by the spin texture of the energy bands, which causes a net spin accumulation at the sample boundaries even for spin-transparent disorder. The newly unveiled extrinsic spin Hall effect is readily tunable by a gate voltage and opens novel opportunities for the control of spin currents in 2D ferromagnetic materials.

摘要

我们提出了一个统一的二维狄拉克系统中电荷载流子输运理论,该系统具有破坏的镜像反转和时间反转对称性(例如,在铁磁石墨烯中实现)。我们发现,源自自旋轨道效应的自旋和赝自旋 SU(2)自由度之间的纠缠导致反常霍尔电导率在接近拓扑间隙时出现独特的栅极电压依赖性(符号变化),这种变化对杂质散射具有鲁棒性,因此是磁化二维狄拉克费米子的明显标志。此外,我们揭示了一种稳健的斜散射机制,该机制由能带的自旋结构调制,即使对于自旋透明的无序,也会在样品边界处引起净自旋积累。新发现的外禀自旋霍尔效应可以通过栅极电压进行调节,为控制二维铁磁材料中的自旋电流提供了新的机会。

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