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采用倒装键合CMOS于低温共烧陶瓷中介层上的三轴全集成电容式触觉传感器。

3-Axis Fully-Integrated Capacitive Tactile Sensor with Flip-Bonded CMOS on LTCC Interposer.

作者信息

Asano Sho, Muroyama Masanori, Nakayama Takahiro, Hata Yoshiyuki, Nonomura Yutaka, Tanaka Shuji

机构信息

Department of Robotics, Graduate School of Engineering, Tohoku University, 6-6-01 Aramaki Aza Aoba, Aoba-ku, Sendai, Miyagi 980-8579, Japan.

Micro System Integration Center, Tohoku University, 519-1176 Aramaki Aza Aoba, Aoba-ku, Sendai, Miyagi 980-0845, Japan.

出版信息

Sensors (Basel). 2017 Oct 25;17(11):2451. doi: 10.3390/s17112451.

Abstract

This paper reports a 3-axis fully integrated differential capacitive tactile sensor surface-mountable on a bus line. The sensor integrates a flip-bonded complementary metal-oxide semiconductor (CMOS) with capacitive sensing circuits on a low temperature cofired ceramic (LTCC) interposer with Au through vias by Au-Au thermo-compression bonding. The CMOS circuit and bonding pads on the sensor backside were electrically connected through Au bumps and the LTCC interposer, and the differential capacitive gap was formed by an Au sealing frame. A diaphragm for sensing 3-axis force was formed in the CMOS substrate. The dimensions of the completed sensor are 2.5 mm in width, 2.5 mm in length, and 0.66 mm in thickness. The fabricated sensor output coded 3-axis capacitive sensing data according to applied 3-axis force by three-dimensional (3D)-printed pins. The measured sensitivity was as high as over 34 Count/mN for normal force and 14 to 15 Count/mN for shear force with small noise, which corresponds to less than 1 mN. The hysteresis and the average cross-sensitivity were also found to be less than 2% full scale and 11%, respectively.

摘要

本文报道了一种可表面安装在总线上的三轴全集成差分电容式触觉传感器。该传感器通过金-金热压键合,将倒装芯片互补金属氧化物半导体(CMOS)与电容传感电路集成在带有金通孔的低温共烧陶瓷(LTCC)中介层上。传感器背面的CMOS电路和焊盘通过金凸块与LTCC中介层实现电连接,差分电容间隙由金密封框架形成。在CMOS衬底中形成了用于感应三轴力的膜片。制成的传感器宽度为2.5毫米,长度为2.5毫米,厚度为0.66毫米。制造的传感器通过三维(3D)打印引脚,根据施加的三轴力输出编码的三轴电容传感数据。对于法向力,测得的灵敏度高达34计数/毫牛以上,对于剪切力,灵敏度为14至15计数/毫牛,噪声较小,对应力小于1毫牛。还发现滞后和平均交叉灵敏度分别小于满量程的2%和11%。

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