• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

基于近耦合的石墨烯中的光自旋电子学。

Optospintronics in Graphene via Proximity Coupling.

机构信息

Electrical Engineering Institute and Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL) , Lausanne CH 1015, Switzerland.

Centre for Advanced 2D Materials, National University of Singapore , Singapore 117542, Singapore.

出版信息

ACS Nano. 2017 Nov 28;11(11):11678-11686. doi: 10.1021/acsnano.7b06800. Epub 2017 Nov 1.

DOI:10.1021/acsnano.7b06800
PMID:29068661
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5707628/
Abstract

The observation of micrometer size spin relaxation makes graphene a promising material for applications in spintronics requiring long-distance spin communication. However, spin dependent scatterings at the contact/graphene interfaces affect the spin injection efficiencies and hence prevent the material from achieving its full potential. While this major issue could be eliminated by nondestructive direct optical spin injection schemes, graphene's intrinsically low spin-orbit coupling strength and optical absorption place an obstacle in their realization. We overcome this challenge by creating sharp artificial interfaces between graphene and WSe monolayers. Application of circularly polarized light activates the spin-polarized charge carriers in the WSe layer due to its spin-coupled valley-selective absorption. These carriers diffuse into the superjacent graphene layer, transport over a 3.5 μm distance, and are finally detected electrically using Co/h-BN contacts in a nonlocal geometry. Polarization-dependent measurements confirm the spin origin of the nonlocal signal. We also demonstrate that such signal is absent if graphene is contacted to bilayer WSe where the inversion symmetry is restored.

摘要

微米级自旋弛豫的观测使得石墨烯成为自旋电子学中需要远距离自旋通信的应用的有前途的材料。然而,接触/石墨烯界面处的自旋相关散射会影响自旋注入效率,从而阻止材料发挥其全部潜力。虽然通过无损的直接光学自旋注入方案可以消除这个主要问题,但石墨烯固有的低自旋轨道耦合强度和光吸收使其难以实现。我们通过在石墨烯和 WSe 单层之间创建锐利的人工界面来克服这一挑战。由于其自旋耦合的谷选择性吸收,圆偏振光会激活 WSe 层中的自旋极化载流子。这些载流子扩散到上覆的石墨烯层中,在 3.5μm 的距离上传输,最后通过 Co/h-BN 接触在非局域几何结构中进行电检测。偏振相关测量证实了非局域信号的自旋起源。我们还证明,如果石墨烯与双层 WSe 接触,其中反转对称性得到恢复,则不存在这种信号。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/231e/5707628/b39f429a9103/nn-2017-06800n_0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/231e/5707628/134319e328de/nn-2017-06800n_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/231e/5707628/167b4097c0df/nn-2017-06800n_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/231e/5707628/f8190dcdd8fd/nn-2017-06800n_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/231e/5707628/e15502596897/nn-2017-06800n_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/231e/5707628/97d9d6ec64ce/nn-2017-06800n_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/231e/5707628/b39f429a9103/nn-2017-06800n_0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/231e/5707628/134319e328de/nn-2017-06800n_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/231e/5707628/167b4097c0df/nn-2017-06800n_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/231e/5707628/f8190dcdd8fd/nn-2017-06800n_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/231e/5707628/e15502596897/nn-2017-06800n_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/231e/5707628/97d9d6ec64ce/nn-2017-06800n_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/231e/5707628/b39f429a9103/nn-2017-06800n_0006.jpg

相似文献

1
Optospintronics in Graphene via Proximity Coupling.基于近耦合的石墨烯中的光自旋电子学。
ACS Nano. 2017 Nov 28;11(11):11678-11686. doi: 10.1021/acsnano.7b06800. Epub 2017 Nov 1.
2
Ultrafast dynamics of spin relaxation in monolayer WSe and the WSe/graphene heterojunction.单层WSe₂及WSe₂/石墨烯异质结中自旋弛豫的超快动力学
Phys Chem Chem Phys. 2022 Jul 13;24(27):16538-16544. doi: 10.1039/d2cp02105f.
3
Opto-Valleytronic Spin Injection in Monolayer MoS/Few-Layer Graphene Hybrid Spin Valves.单层 MoS2/少层石墨烯杂化自旋阀中的光谷电子自旋注入。
Nano Lett. 2017 Jun 14;17(6):3877-3883. doi: 10.1021/acs.nanolett.7b01393. Epub 2017 May 31.
4
Effect of Distance on Photoluminescence Quenching and Proximity-Induced Spin-Orbit Coupling in Graphene/WSe Heterostructures.石墨烯/WS2 异质结构中距离对光致发光猝灭和近场诱导自旋轨道耦合的影响。
Nano Lett. 2018 Jun 13;18(6):3580-3585. doi: 10.1021/acs.nanolett.8b00691. Epub 2018 Jun 4.
5
Valley Polarization by Spin Injection in a Light-Emitting van der Waals Heterojunction.通过发光范德瓦尔斯异质结中的自旋注入实现谷极化。
Nano Lett. 2016 Sep 14;16(9):5792-7. doi: 10.1021/acs.nanolett.6b02527. Epub 2016 Sep 2.
6
Inversion of Spin Signal and Spin Filtering in Ferromagnet|Hexagonal Boron Nitride-Graphene van der Waals Heterostructures.铁磁体|六方氮化硼-石墨烯范德华异质结构中的自旋信号反转与自旋过滤
Sci Rep. 2016 Feb 17;6:21168. doi: 10.1038/srep21168.
7
Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides.MoS2 和其他 VI 族二维半导体单层中的耦合自旋和谷物理。
Phys Rev Lett. 2012 May 11;108(19):196802. doi: 10.1103/PhysRevLett.108.196802. Epub 2012 May 7.
8
Artificial Graphene Spin Polarized Electrode for Magnetic Tunnel Junctions.人工石墨烯自旋极化电极用于磁性隧道结。
Nano Lett. 2023 Jan 11;23(1):34-41. doi: 10.1021/acs.nanolett.2c03113. Epub 2022 Dec 19.
9
Spin-orbit proximity effect in graphene.石墨烯中的自旋轨道近藤效应。
Nat Commun. 2014 Sep 26;5:4875. doi: 10.1038/ncomms5875.
10
Electronic spin transport and spin precession in single graphene layers at room temperature.室温下单层石墨烯中的电子自旋输运与自旋进动
Nature. 2007 Aug 2;448(7153):571-4. doi: 10.1038/nature06037. Epub 2007 Jul 15.

引用本文的文献

1
Tracking and controlling ultrafast charge and energy flow in graphene-semiconductor heterostructures.追踪与控制石墨烯-半导体异质结构中的超快电荷与能量流动。
Innovation (Camb). 2025 Jan 4;6(3):100764. doi: 10.1016/j.xinn.2024.100764. eCollection 2025 Mar 3.
2
Quantum sensing with optically accessible spin defects in van der Waals layered materials.利用范德华层状材料中光学可及的自旋缺陷进行量子传感
Light Sci Appl. 2024 Nov 5;13(1):303. doi: 10.1038/s41377-024-01630-y.
3
Signatures of Electric Field and Layer Separation Effects on the Spin-Valley Physics of MoSe/WSe Heterobilayers: From Energy Bands to Dipolar Excitons.

本文引用的文献

1
Dynamical screening in monolayer transition-metal dichalcogenides and its manifestations in the exciton spectrum.单层过渡金属二硫属化物中的动力学屏蔽及其在激子光谱中的表现。
J Phys Condens Matter. 2019 May 22;31(20):203001. doi: 10.1088/1361-648X/ab071f. Epub 2019 Feb 14.
2
Electrical gate control of spin current in van der Waals heterostructures at room temperature.室温下范德瓦尔斯异质结构中自旋电流的电门控
Nat Commun. 2017 Jul 5;8:16093. doi: 10.1038/ncomms16093.
3
Opto-Valleytronic Spin Injection in Monolayer MoS/Few-Layer Graphene Hybrid Spin Valves.
电场和层间分离对MoSe₂/WSe₂异质双层自旋-谷物理特性的影响特征:从能带到偶极激子
Nanomaterials (Basel). 2023 Mar 27;13(7):1187. doi: 10.3390/nano13071187.
4
Room-temperature electrical control of polarization and emission angle in a cavity-integrated 2D pulsed LED.腔集成二维脉冲发光二极管中极化和发射角的室温电控制
Nat Commun. 2022 Aug 19;13(1):4884. doi: 10.1038/s41467-022-32292-2.
5
Deciphering asymmetric charge transfer at transition metal dichalcogenide-graphene interface by helicity-resolved ultrafast spectroscopy.通过螺旋度分辨超快光谱法解析过渡金属二硫属化物-石墨烯界面的不对称电荷转移
Sci Adv. 2021 Aug 20;7(34). doi: 10.1126/sciadv.abg2999. Print 2021 Aug.
6
Spintronics in Two-Dimensional Materials.二维材料中的自旋电子学。
Nanomicro Lett. 2020 Apr 18;12(1):93. doi: 10.1007/s40820-020-00424-2.
7
Electrically Controlled Spin Injection from Giant Rashba Spin-Orbit Conductor BiTeBr.从巨Rashba自旋轨道导体BiTeBr进行电控自旋注入。
Nano Lett. 2020 Jul 8;20(7):4782-4791. doi: 10.1021/acs.nanolett.0c00458. Epub 2020 Jun 19.
8
Charge-to-Spin Conversion by the Rashba-Edelstein Effect in Two-Dimensional van der Waals Heterostructures up to Room Temperature.二维范德华异质结构中直至室温的Rashba-埃德尔斯坦效应导致的电荷到自旋转换
Nano Lett. 2019 Sep 11;19(9):5959-5966. doi: 10.1021/acs.nanolett.9b01611. Epub 2019 Aug 27.
9
Large Proximity-Induced Spin Lifetime Anisotropy in Transition-Metal Dichalcogenide/Graphene Heterostructures.过渡金属二硫化物/石墨烯异质结构中的大近邻诱导自旋寿命各向异性。
Nano Lett. 2017 Dec 13;17(12):7528-7532. doi: 10.1021/acs.nanolett.7b03460. Epub 2017 Nov 29.
单层 MoS2/少层石墨烯杂化自旋阀中的光谷电子自旋注入。
Nano Lett. 2017 Jun 14;17(6):3877-3883. doi: 10.1021/acs.nanolett.7b01393. Epub 2017 May 31.
4
A two-dimensional spin field-effect switch.二维自旋场效应开关。
Nat Commun. 2016 Nov 11;7:13372. doi: 10.1038/ncomms13372.
5
Valley Polarization by Spin Injection in a Light-Emitting van der Waals Heterojunction.通过发光范德瓦尔斯异质结中的自旋注入实现谷极化。
Nano Lett. 2016 Sep 14;16(9):5792-7. doi: 10.1021/acs.nanolett.6b02527. Epub 2016 Sep 2.
6
Long-Lived Hole Spin/Valley Polarization Probed by Kerr Rotation in Monolayer WSe2.单层 WSe2 中克尔旋转探测的长寿命空穴自旋/谷极化。
Nano Lett. 2016 Aug 10;16(8):5010-4. doi: 10.1021/acs.nanolett.6b01727. Epub 2016 Jul 28.
7
Spin Lifetimes Exceeding 12 ns in Graphene Nonlocal Spin Valve Devices.在石墨烯无接触自旋阀器件中,自旋寿命超过 12 纳秒。
Nano Lett. 2016 Jun 8;16(6):3533-9. doi: 10.1021/acs.nanolett.6b00497. Epub 2016 May 26.
8
WSe₂ Light-Emitting Tunneling Transistors with Enhanced Brightness at Room Temperature.室温下具有增强亮度的 WSe₂ 发光隧道晶体管。
Nano Lett. 2015 Dec 9;15(12):8223-8. doi: 10.1021/acs.nanolett.5b03740. Epub 2015 Nov 16.
9
Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform.利用范德瓦尔斯异质结构器件平台进行 MoS2 的多端输运测量。
Nat Nanotechnol. 2015 Jun;10(6):534-40. doi: 10.1038/nnano.2015.70. Epub 2015 Apr 27.
10
Graphene spintronics.石墨烯自旋电子学。
Nat Nanotechnol. 2014 Oct;9(10):794-807. doi: 10.1038/nnano.2014.214.