Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg, Sweden.
Nat Commun. 2017 Jul 5;8:16093. doi: 10.1038/ncomms16093.
Two-dimensional (2D) crystals offer a unique platform due to their remarkable and contrasting spintronic properties, such as weak spin-orbit coupling (SOC) in graphene and strong SOC in molybdenum disulfide (MoS). Here we combine graphene and MoS in a van der Waals heterostructure (vdWh) to demonstrate the electric gate control of the spin current and spin lifetime at room temperature. By performing non-local spin valve and Hanle measurements, we unambiguously prove the gate tunability of the spin current and spin lifetime in graphene/MoS vdWhs at 300 K. This unprecedented control over the spin parameters by orders of magnitude stems from the gate tuning of the Schottky barrier at the MoS/graphene interface and MoS channel conductivity leading to spin dephasing in high-SOC material. Our findings demonstrate an all-electrical spintronic device at room temperature with the creation, transport and control of the spin in 2D materials heterostructures, which can be key building blocks in future device architectures.
二维（2D）晶体因其显著而对比鲜明的自旋电子特性而提供了一个独特的平台，例如石墨烯中的弱自旋轨道耦合（SOC）和二硫化钼（MoS）中的强 SOC。在这里，我们将石墨烯和 MoS 结合在范德华异质结构（vdWh）中，以证明在室温下自旋电流和自旋寿命的电门控。通过进行非局部自旋阀和 Hanle 测量，我们明确证明了在 300 K 时石墨烯/MoS vdWh 中自旋电流和自旋寿命的门控可调性。这种对自旋参数的前所未有的控制是通过在 MoS/石墨烯界面处的肖特基势垒和 MoS 沟道电导率的门控实现的，这导致在高 SOC 材料中自旋退相。我们的发现展示了一种在室温下具有全电自旋电子器件的能力，可在 2D 材料异质结构中创建、传输和控制自旋，这可能是未来器件架构的关键构建块。
