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基于胶体量子点的电驱动单光子源,在室温下具有近乎最优的反聚束效应。

Electrically-driven single-photon sources based on colloidal quantum dots with near-optimal antibunching at room temperature.

机构信息

Center for Chemistry of High-Performance & Novel Materials, State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, China.

Center for Chemistry of High-Performance & Novel Materials, State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.

出版信息

Nat Commun. 2017 Oct 26;8(1):1132. doi: 10.1038/s41467-017-01379-6.

Abstract

Photonic quantum information requires high-purity, easily accessible, and scalable single-photon sources. Here, we report an electrically driven single-photon source based on colloidal quantum dots. Our solution-processed devices consist of isolated CdSe/CdS core/shell quantum dots sparsely buried in an insulating layer that is sandwiched between electron-transport and hole-transport layers. The devices generate single photons with near-optimal antibunching at room temperature, i.e., with a second-order temporal correlation function at zero delay (g (0)) being <0.05 for the best devices without any spectral filtering or background correction. The optimal g (0) from single-dot electroluminescence breaks the lower g (0) limit of the corresponding single-dot photoluminescence. Such highly suppressed multi-photon-emission probability is attributed to both novel device design and carrier injection/recombination dynamics. The device structure prevents background electroluminescence while offering efficient single-dot electroluminescence. A quantitative model is developed to illustrate the carrier injection/recombination dynamics of single-dot electroluminescence.

摘要

光子量子信息需要高纯度、易于获取和可扩展的单光子源。在这里,我们报告了一种基于胶体量子点的电驱动单光子源。我们的溶液处理器件由孤立的 CdSe/CdS 核/壳量子点稀疏地埋在绝缘层中组成,该绝缘层夹在电子传输层和空穴传输层之间。这些器件在室温下产生具有近乎最优的反聚束特性的单光子,即对于没有任何光谱滤波或背景校正的最佳器件,零延迟时的二阶时间相关函数 g(0) < 0.05。最佳 g(0) 来自单量子点电致发光,打破了相应单量子点光致发光的较低 g(0)限制。这种高度抑制的多光子发射概率归因于新颖的器件设计和载流子注入/复合动力学。该器件结构防止了背景电致发光,同时提供了高效的单量子点电致发光。还开发了一个定量模型来说明单量子点电致发光的载流子注入/复合动力学。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/81e5/5656660/7af89a0d2ff9/41467_2017_1379_Fig1_HTML.jpg

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