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低温生长的氢化非晶氮氧化硅薄膜的水蒸气降解

Degradation by water vapor of hydrogenated amorphous silicon oxynitride films grown at low temperature.

作者信息

Lee Hyung-Ik, Park Jong-Bong, Xianyu Wenxu, Kim Kihong, Chung Jae Gwan, Kyoung Yong Koo, Byun Sunjung, Yang Woo Young, Park Yong Young, Kim Seong Min, Cho Eunae, Shin Jai Kwang

机构信息

Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 16678, Korea.

出版信息

Sci Rep. 2017 Oct 26;7(1):14146. doi: 10.1038/s41598-017-14291-2.

DOI:10.1038/s41598-017-14291-2
PMID:29074890
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5658330/
Abstract

We report on the degradation process by water vapor of hydrogenated amorphous silicon oxynitride (SiON:H) films deposited by plasma-enhanced chemical vapor deposition at low temperature. The stability of the films was investigated as a function of the oxygen content and deposition temperature. Degradation by defects such as pinholes was not observed with transmission electron microscopy. However, we observed that SiON:H film degrades by reacting with water vapor through only interstitial paths and nano-defects. To monitor the degradation process, the atomic composition, mass density, and fully oxidized thickness were measured by using high-resolution Rutherford backscattering spectroscopy and X-ray reflectometry. The film rapidly degraded above an oxygen composition of ~27 at%, below a deposition temperature of ~150 °C, and below an mass density of ~2.15 g/cm. This trend can be explained by the extents of porosity and percolation channel based on the ring model of the network structure. In the case of a high oxygen composition or low temperature, the SiON:H film becomes more porous because the film consists of network channels of rings with a low energy barrier.

摘要

我们报道了通过低温等离子体增强化学气相沉积法制备的氢化氮氧化非晶硅（SiON:H）薄膜在水蒸气作用下的降解过程。研究了薄膜稳定性与氧含量和沉积温度的关系。通过透射电子显微镜未观察到诸如针孔等缺陷导致的降解。然而，我们观察到SiON:H薄膜仅通过间隙路径和纳米缺陷与水蒸气反应而降解。为了监测降解过程，使用高分辨率卢瑟福背散射光谱和X射线反射测量法测量了原子组成、质量密度和完全氧化厚度。当氧组成高于约27原子%、沉积温度低于约150°C以及质量密度低于约2.15 g/cm时，薄膜迅速降解。基于网络结构的环模型，这种趋势可以通过孔隙率和渗流通道的程度来解释。在高氧组成或低温情况下，SiON:H薄膜变得更具多孔性，因为该薄膜由具有低能垒的环的网络通道组成。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0cb2/5658330/aeb7eda0c8fa/41598_2017_14291_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0cb2/5658330/bc41a085e3b5/41598_2017_14291_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0cb2/5658330/9a962596c177/41598_2017_14291_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0cb2/5658330/f13c61bf5f96/41598_2017_14291_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0cb2/5658330/8e40c2ccf9b4/41598_2017_14291_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0cb2/5658330/d41d86a5e16c/41598_2017_14291_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0cb2/5658330/b837e7372db1/41598_2017_14291_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0cb2/5658330/aeb7eda0c8fa/41598_2017_14291_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0cb2/5658330/bc41a085e3b5/41598_2017_14291_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0cb2/5658330/9a962596c177/41598_2017_14291_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0cb2/5658330/f13c61bf5f96/41598_2017_14291_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0cb2/5658330/8e40c2ccf9b4/41598_2017_14291_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0cb2/5658330/d41d86a5e16c/41598_2017_14291_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0cb2/5658330/b837e7372db1/41598_2017_14291_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0cb2/5658330/aeb7eda0c8fa/41598_2017_14291_Fig7_HTML.jpg

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