Zhang Chi, Wu Majiaqi, Wang Pengchang, Jian Maoliang, Zhang Jianhua, Yang Lianqiao
Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Yanchang Road 149, Shanghai 200072, China.
Nanomaterials (Basel). 2021 Dec 11;11(12):3363. doi: 10.3390/nano11123363.
In this paper, the environmental stability of silicon nitride (SiNx) films deposited at 80 °C by plasma-enhanced chemical vapor deposition was studied systematically. X-ray photoelectron spectroscopy and Fourier transform infrared reflection were used to analyze the element content and atomic bond structure of the amorphous SiN films. Variation of mechanical and optical properties were also evaluated. It is found that SiN deposited at low temperature is easily oxidized, especially at elevated temperature and moisture. The hardness and elastic modulus did not change significantly with the increase of oxidation. The changes of the surface morphology, transmittance, and fracture extensibility are negligible. Finally, it is determined that SiN films deposited at low-temperature with proper processing parameters are suitable for thin-film encapsulation of flexible devices.
本文系统研究了通过等离子体增强化学气相沉积在80℃下沉积的氮化硅（SiNx）薄膜的环境稳定性。利用X射线光电子能谱和傅里叶变换红外反射分析非晶SiN薄膜的元素含量和原子键结构。还评估了力学和光学性能的变化。发现低温沉积的SiN容易被氧化，特别是在高温和潮湿环境下。随着氧化程度的增加，硬度和弹性模量没有显著变化。表面形貌、透过率和断裂伸长率的变化可以忽略不计。最后确定，采用适当工艺参数低温沉积的SiN薄膜适用于柔性器件的薄膜封装。
