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纳米线-纳米线:通过按需选择性集成分层异质纳米线实现全纳米线电子学。

Nanowire-on-Nanowire: All-Nanowire Electronics by On-Demand Selective Integration of Hierarchical Heterogeneous Nanowires.

机构信息

Applied Nano and Thermal Science Lab, Department of Mechanical Engineering, Seoul National University , 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Korea.

Department of Electrical Engineering and Computer Science, University of Michigan , Ann Arbor, Michigan 48109, United States.

出版信息

ACS Nano. 2017 Dec 26;11(12):12311-12317. doi: 10.1021/acsnano.7b06098. Epub 2017 Nov 1.

DOI:10.1021/acsnano.7b06098
PMID:29077403
Abstract

Exploration of the electronics solely composed of bottom-up synthesized nanowires has been largely limited due to the complex multistep integration of diverse nanowires. We report a single-step, selective, direct, and on-demand laser synthesis of a hierarchical heterogeneous nanowire-on-nanowire structure (secondary nanowire on the primary backbone nanowire) without using any conventional photolithography or vacuum deposition. The highly confined temperature rise by laser irradiation on the primary backbone metallic nanowire generates a highly localized nanoscale temperature field and photothermal reaction to selectively grow secondary branch nanowires along the backbone nanowire. As a proof-of-concept for an all-nanowire electronics demonstration, an all-nanowire UV sensor was successfully fabricated without using conventional fabrication processes.

摘要

由于多种纳米线的复杂多步集成,完全由自下而上合成的纳米线组成的电子器件的探索受到了很大的限制。我们报告了一种单步、选择性、直接和按需的激光合成分层异质纳米线-纳米线结构(在主骨干纳米线上的二级纳米线),而无需使用任何传统的光刻或真空沉积。激光辐照在主骨干金属纳米线上引起的高度受限的温升产生了高度局域的纳米尺度温度场和光热反应,从而沿骨干纳米线选择性地生长二级分支纳米线。作为全纳米线电子演示的概念验证,成功地制造了没有使用传统制造工艺的全纳米线紫外传感器。

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