Department of Mechanical Engineering, KAIST, 291 Daehak-ro, Yusong-Gu, Daejeon 305-701, South Korea.
Nanoscale Res Lett. 2013 Nov 20;8(1):489. doi: 10.1186/1556-276X-8-489.
Inkjet printing of functional materials has drawn tremendous interest as an alternative to the conventional photolithography-based microelectronics fabrication process development. We introduce direct selective nanowire array growth by inkjet printing of Zn acetate precursor ink patterning and subsequent hydrothermal ZnO local growth without nozzle clogging problem which frequently happens in nanoparticle inkjet printing. The proposed process can directly grow ZnO nanowires in any arbitrary patterned shape, and it is basically very fast, low cost, environmentally benign, and low temperature. Therefore, Zn acetate precursor inkjet printing-based direct nanowire local growth is expected to give extremely high flexibility in nanomaterial patterning for high-performance electronics fabrication especially at the development stage. As a proof of concept of the proposed method, ZnO nanowire network-based field effect transistors and ultraviolet photo-detectors were demonstrated by direct patterned grown ZnO nanowires as active layer.
喷墨打印技术作为一种替代传统基于光刻的微电子制造工艺的方法，已经引起了极大的关注。我们通过喷墨打印醋酸锌前体墨水图案化和随后的水热 ZnO 局部生长，引入了直接选择性纳米线阵列生长，而不会出现喷墨打印中经常出现的喷嘴堵塞问题。所提出的工艺可以直接在任何任意图案形状中生长 ZnO 纳米线，并且它基本上非常快速、低成本、环保且低温。因此，基于醋酸锌前体喷墨打印的直接纳米线局部生长有望为高性能电子制造，特别是在开发阶段的纳米材料图案化提供极高的灵活性。作为该方法的概念验证，通过直接图案化生长的 ZnO 纳米线作为有源层，展示了基于 ZnO 纳米线网络的场效应晶体管和紫外光探测器。
