Haddadi Abbas, Razeghi Manijeh
Opt Lett. 2017 Nov 1;42(21):4275-4278. doi: 10.1364/OL.42.004275.
A bias-selectable, high operating temperature, three-color short-, extended-short-, and mid-wavelength infrared photodetector based on InAs/GaSb/AlSb type-II superlattices on GaSb substrate has been demonstrated. The short-, extended-short-, and mid-wavelength channels' 50% cutoff wavelengths were 2.3, 2.9, and 4.4 μm, respectively, at 150 K. The mid-wavelength channel exhibited a saturated quantum efficiency of 34% at 4 μm under +200 mV bias voltage in a front-side illumination configuration and without any antireflection coating. At 200 mV, the device exhibited a dark current density of 8.7×10 A/cm providing a specific detectivity of ∼2×10 cm·Hz/W at 150 K. The short-wavelength channel achieved a saturated quantum efficiency of 20% at 1.8 μm. At -10 mV, the device's dark current density was 5.5×10 A/cm. At zero bias, its specific detectivity was 1×10 cm·Hz/W at 150 K. The extended short-wavelength channel achieved a saturated quantum efficiency of 22% at 2.75 μm. Under -2 V bias voltage, the device exhibited a dark current density of 1.8×10 A/cm providing a specific detectivity of 6.3×10 cm·Hz/W at 150 K.
基于生长在GaSb衬底上的InAs/GaSb/AlSb II型超晶格，已经展示了一种具有偏置可选择、高工作温度特性的三色短波长、超短波长和中波长红外光电探测器。在150K温度下，短波长、超短波长和中波长通道的50%截止波长分别为2.3μm、2.9μm和4.4μm。在正面照明配置且无任何抗反射涂层的情况下，中波长通道在+200 mV偏置电压下、4μm波长处表现出34%的饱和量子效率。在200 mV时，该器件在150K温度下的暗电流密度为8.7×10 A/cm ，比探测率约为2×10 cm·Hz/W 。短波长通道在1.8μm波长处实现了20%的饱和量子效率。在-10 mV时，器件的暗电流密度为5.5×10 A/cm 。在零偏置下其在150K温度下的比探测率为1×10 cm·Hz/W 。超短波长通道在波长2.75μm处实现了22%的饱和量子效率。在-2 V偏置电压下，该器件在150K温度下的暗电流密度为1.8×10 A/cm ，比探测率为6.3×10 cm·Hz/W 。
