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基于光学相干断层扫描技术的高功率氮化铟镓基发光二极管热膨胀系数测定

Determination on the Coefficient of Thermal Expansion in High-Power InGaN-based Light-emitting Diodes by Optical Coherence Tomography.

作者信息

Lee Ya-Ju, Chou Chun-Yang, Huang Chun-Ying, Yao Yung-Chi, Haung Yi-Kai, Tsai Meng-Tsan

机构信息

Institute of Electro-Optical Science and Technology, National Taiwan Normal University, 88, Sec. 4, Ting-Chou Road, Taipei, 116, Taiwan.

Department of Electrical Engineering, University of Washington, Seattle, WA, 98195, USA.

出版信息

Sci Rep. 2017 Oct 31;7(1):14390. doi: 10.1038/s41598-017-14689-y.

DOI:10.1038/s41598-017-14689-y
PMID:29089538
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5663912/
Abstract

The coefficient of thermal expansion (CTE) is a physical quantity that indicates the thermal expansion value of a material upon heating. For advanced thermal management, the accurate and immediate determination of the CTE of packaging materials is gaining importance because the demand for high-power lighting-emitting diodes (LEDs) is currently increasing. In this study, we used optical coherence tomography (OCT) to measure the CTE of an InGaN-based (λ = 450 nm) high-power LED encapsulated in polystyrene resin. The distances between individual interfaces of the OCT images were observed and recorded to derive the instantaneous CTE of the packaged LED under different injected currents. The LED junction temperature at different injected currents was established with the forward voltage method. Accordingly, the measured instantaneous CTE of polystyrene resin varied from 5.86 × 10 °C to 14.10 × 10 °C in the junction temperature range 25-225 °C and exhibited a uniform distribution in an OCT scanning area of 200 × 200 μm. Most importantly, this work validates the hypothesis that OCT can provide an alternative way to directly and nondestructively determine the spatially resolved CTE of the packaged LED device, which offers significant advantages over traditional CTE measurement techniques.

摘要

热膨胀系数(CTE)是一个物理量,它表示材料在加热时的热膨胀值。对于先进的热管理而言,准确且即时地测定包装材料的CTE变得愈发重要,因为目前对高功率发光二极管(LED)的需求正在增加。在本研究中,我们使用光学相干断层扫描(OCT)来测量封装在聚苯乙烯树脂中的基于InGaN(λ = 450 nm)的高功率LED的CTE。观察并记录OCT图像各个界面之间的距离,以得出不同注入电流下封装LED的瞬时CTE。通过正向电压法确定不同注入电流下的LED结温。相应地,在25 - 225°C的结温范围内,测得的聚苯乙烯树脂瞬时CTE在5.86×10⁻⁶/°C至14.10×10⁻⁶/°C之间变化,并且在200×200μm的OCT扫描区域内呈现出均匀分布。最重要的是,这项工作验证了以下假设:OCT能够提供一种替代方法,直接且无损地确定封装LED器件的空间分辨CTE,这相较于传统CTE测量技术具有显著优势。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1c52/5663912/58e5d66c99fd/41598_2017_14689_Fig7_HTML.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1c52/5663912/3393b5955277/41598_2017_14689_Fig1_HTML.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1c52/5663912/5ef21b8fa335/41598_2017_14689_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1c52/5663912/2cac85b6cf0c/41598_2017_14689_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1c52/5663912/58e5d66c99fd/41598_2017_14689_Fig7_HTML.jpg

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