Liu Shih-Chia, Zhao Deyin, Liu Yonghao, Yang Hongjun, Sun Yuze, Ma Zhengqiang, Reuterskiöld-Hedlund Carl, Hammar Mattias, Zhou Weidong
Appl Opt. 2017 Nov 1;56(31):H67-H73. doi: 10.1364/AO.56.000H67.
We report here the design and experimental demonstration of optically pumped photonic crystal bandedge membrane lasers on silicon-on-insulator (SOI) and on bulk silicon (Si) substrates, based on heterogeneously integrated InGaAsP multi-quantum-well membrane layers transfer printed onto patterned photonic crystal cavities. Single-mode lasing under room-temperature operation was observed at 1542 nm, with excellent side mode suppression ratio greater than 31.5 dB, for the laser built on SOI substrate. For the laser built on bulk Si substrate, single-mode lasing was also achieved at 1452 nm with much lower thermal resistance, as compared to that of the laser built on SOI substrates. Such improved thermal characteristics are favorable for lasers operating potentially at higher temperatures and higher power.
我们在此报告基于转移印刷到图案化光子晶体腔上的异质集成InGaAsP多量子阱膜层，在绝缘体上硅（SOI）和体硅（Si）衬底上的光泵浦光子晶体带边膜激光器的设计与实验演示。对于基于SOI衬底构建的激光器，在室温下观察到1542nm的单模激射，其具有大于31.5dB的优异边模抑制比。对于基于体硅衬底构建的激光器，与基于SOI衬底的激光器相比，在1452nm处也实现了单模激射，且热阻低得多。这种改善的热特性有利于激光器在更高温度和更高功率下潜在运行。
