Bergeron Denis E, Cessna Jeffrey T, Zimmerman Brian E
Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
Appl Radiat Isot. 2018 Apr;134:416-420. doi: 10.1016/j.apradiso.2017.10.038. Epub 2017 Oct 20.
In nuclear medicine, Ge is used to generate Ga for imaging by positron emission tomography (PET) and sealed sources containing Ge/Ga in equilibrium have been adopted as long-lived calibration surrogates for the more common PET nuclide, F. We prepared several Ge sources for measurement on a NaI(Tl) well counter and a pressurized ionization chamber, following their decay for 110 weeks (≈ 2.8 half-lives). We determined values for the Ge half-life of T = 271.14(15) d and T = 271.07(12) d from the NaI(Tl) well counter and ionization chamber measurements, respectively. These are in accord with the current Decay Data Evaluation Project (DDEP) recommended value of T = 270.95(26) d and we discuss the expected impact of our measurements on this value.
在核医学中,锗被用于通过正电子发射断层扫描(PET)生成用于成像的镓,并且含有处于平衡状态的锗/镓的密封源已被用作更常见的PET核素氟的长寿命校准替代物。我们制备了几个锗源,在碘化钠(铊)井型计数器和加压电离室上进行测量,让它们衰变110周(约2.8个半衰期)。我们分别从碘化钠(铊)井型计数器和电离室测量中确定锗的半衰期值为T = 271.14(15)天和T = 271.07(12)天。这些值与当前衰变数据评估项目(DDEP)推荐的值T = 270.95(26)天一致,并且我们讨论了我们的测量对该值的预期影响。