Zhao G Q, Lin C J, Deng Z, Gu G X, Yu S, Wang X C, Gong Z Z, Uemura Yasutomo J, Li Y Q, Jin C Q
Institute of Physics, Chinese Academy of Sciences; Collaborative Innovation Center of Quantum Matter, Beijing, 100190, China.
University of Chinese Academy of Sciences, Beijing, 100190, China.
Sci Rep. 2017 Nov 3;7(1):14473. doi: 10.1038/s41598-017-08394-z.
Recently a new diluted magnetic semiconductor, (Ba,K)(Zn,Mn)As (BZA), with high Curie temperature was discovered, showing an independent spin and charge-doping mechanism. This makes BZA a promising material for spintronics devices. We report the successful growth of a BZA single crystal for the first time in this study. An Andreev reflection junction, which can be used to evaluate spin polarization, was fabricated based on the BZA single crystal. A 66% spin polarization of the BZA single crystal was obtained by Andreev reflection spectroscopy analysis.
最近,一种具有高居里温度的新型稀磁半导体(Ba,K)(Zn,Mn)As(BZA)被发现,它展现出独立的自旋和电荷掺杂机制。这使得BZA成为自旋电子学器件的一种有前景的材料。在本研究中,我们首次报道了成功生长出BZA单晶。基于该BZA单晶制备了一个可用于评估自旋极化的安德烈夫反射结。通过安德烈夫反射光谱分析,获得了BZA单晶66%的自旋极化率。