Ba(Zn(1 - 2x)MnxCux)2As2：一种在锌位点进行锰和铜共掺杂的块状稀磁半导体。

Ba(Zn(1-2x)MnxCux)2As2: A Bulk Form Diluted Ferromagnetic Semiconductor with Mn and Cu Codoping at Zn Sites.

作者信息

Man Huiyuan, Guo Shengli, Sui Yu, Guo Yang, Chen Bin, Wang Hangdong, Ding Cui, Ning F L

机构信息

Department of Physics, Zhejiang University, Hangzhou 310027, China.

Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China.

出版信息

Sci Rep. 2015 Oct 23;5:15507. doi: 10.1038/srep15507.

DOI:10.1038/srep15507

PMID:26492957

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4616028/

Abstract

We report the synthesis and characterization of a bulk form diluted magnetic semiconductor Ba(Zn(1-2x)MnxCux)2As2 (0.025 ≤ x ≤ 0.2) with the crystal structure identical to that of "122" family iron based superconductors and the antiferromagnet BaMn2As2. No ferromagnetic order occurs with (Zn, Mn) or (Zn, Cu) substitution in the parent compound BaZn2As2. Only when Zn is substituted by both Mn and Cu simultaneously, can the system undergo a ferromagnetic transition below TC ~ 70 K, followed by a magnetic glassy transition at Tf ~ 35 K. AC susceptibility measurements for Ba(Zn0.75Mn0.125Cu0.125)2As2 reveal that Tf strongly depends on the applied frequency with [formula in text] and a DC magnetic field dependence of [formula in text], demonstrating that a spin glass transition takes place at Tf. As large as -53% negative magnetoresistance has been observed in Ba(Zn(1-2x)MnxCux)2As2, enabling its possible application in memory devices.

摘要

我们报道了一种体相形式的稀磁半导体Ba(Zn(1 - 2x)MnxCux)2As2（0.025 ≤ x ≤ 0.2）的合成与表征，其晶体结构与“122”族铁基超导体以及反铁磁体BaMn2As2相同。在母体化合物BaZn2As2中，用(Zn, Mn)或(Zn, Cu)替代时不会出现铁磁有序。只有当Zn同时被Mn和Cu替代时，该体系才能在TC ~ 70 K以下发生铁磁转变，随后在Tf ~ 35 K发生磁玻璃转变。对Ba(Zn0.75Mn0.125Cu0.125)2As2的交流磁化率测量表明，Tf强烈依赖于所施加的频率，其关系式为[文中公式]，并且依赖于直流磁场，关系式为[文中公式]，这表明在Tf发生了自旋玻璃转变。在Ba(Zn(1 - 2x)MnxCux)2As2中观察到高达 - 53%的负磁阻，这使其有可能应用于存储器件。