Zhao Kunyu, Yu Huizhu, Zou Jian, Zeng Huarong, Li Guorong, Li Xiaomin
Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China.
School of Chemistry and Materials Engineering, Fuyang Normal University, Fuyang 236037, China.
Materials (Basel). 2017 Nov 1;10(11):1258. doi: 10.3390/ma10111258.
In this work, we have studied the microstructures, nanodomains, polarization preservation behaviors, and electrical properties of BiFeMnO₃ (BFMO) multiferroic thin films, which have been epitaxially created on the substrates of SrRuO₃, SrTiO₃, and TiN-buffered (001)-oriented Si at different oxygen pressures via piezoresponse force microscopy and conductive atomic force microscopy. We found that the pure phase state, inhomogeneous piezoresponse force microscopy (PFM) response, low leakage current with unidirectional diode-like properties, and orientation-dependent polarization reversal properties were found in BFMO thin films deposited at low oxygen pressure. Meanwhile, these films under high oxygen pressures resulted in impurities in the secondary phase in BFMO films, which caused a greater leakage that hindered the polarization preservation capability. Thus, this shows the important impact of the oxygen pressure on modulating the physical effects of BFMO films.
在本工作中，我们通过压电力显微镜和导电原子力显微镜研究了在不同氧压下在SrRuO₃、SrTiO₃和TiN缓冲的（001）取向Si衬底上外延生长的BiFeMnO₃（BFMO）多铁性薄膜的微观结构、纳米畴、极化保持行为和电学性质。我们发现，在低氧压下沉积的BFMO薄膜呈现出纯相状态、不均匀的压电力显微镜（PFM）响应、具有单向二极管特性的低漏电流以及与取向相关的极化反转特性。同时，在高氧压下这些薄膜导致BFMO薄膜中出现第二相杂质，这引起了更大的漏电流，阻碍了极化保持能力。因此，这表明氧压对调节BFMO薄膜的物理效应具有重要影响。
