Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research) , 2 Fusionopolis Way, #08-03 Innovis, 138634 Singapore.
Data Storage Institute, A*STAR (Agency for Science, Technology and Research) , 2 Fusionopolis Way, #08-01 Innovis, 138634 Singapore.
Nano Lett. 2017 Dec 13;17(12):7620-7628. doi: 10.1021/acs.nanolett.7b03613. Epub 2017 Nov 8.
Localized optical resonances in metallic nanostructures have been increasingly used in color printing, demonstrating unprecedented resolution but limited in color gamut. Here, we introduce a new nanostructure design, which broadens the gamut while retaining print resolution. Instead of metals, silicon nanostructures that exhibit localized magnetic and electric dipole resonances were fabricated on a silicon substrate coated with a SiN index matching layer. Index matching allows a suppression of substrate effects, thus enabling Kerker's conditions to be met, that is, sharpened transitions in the reflectance spectra leading to saturated colors. This nanostructure design achieves a color gamut superior to sRGB, and is compatible with CMOS processes. The presented design could enable compact high-resolution color displays and filters, and the use of a SiN antireflection coating can be readily extended to designs with nanostructures fabricated using other high-index materials.
金属纳米结构中的局域光学共振已被越来越多地用于彩色打印，展示了前所未有的分辨率，但色域有限。在这里，我们引入了一种新的纳米结构设计，在保持打印分辨率的同时拓宽了色域。我们在涂有 SiN 折射率匹配层的硅衬底上制造了展示局域磁偶极子和电偶极子共振的硅纳米结构，而不是金属。折射率匹配允许抑制衬底效应，从而满足 Kerker 条件，即反射率谱中锐化的跃迁导致饱和颜色。这种纳米结构设计实现了优于 sRGB 的色域，并且与 CMOS 工艺兼容。所提出的设计可以实现紧凑的高分辨率彩色显示器和滤波器，并且可以很容易地将 SiN 抗反射涂层的使用扩展到使用其他高折射率材料制造的纳米结构设计。
