Bai Peng, Zhang Y H, Shen W Z
Key Laboratory of Artificial Structures and Quantum Control, Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China.
Collaborative Innovation Center of Advanced Microstructures, Nanjing, 210093, People's Republic of China.
Sci Rep. 2017 Nov 10;7(1):15341. doi: 10.1038/s41598-017-15613-0.
High performance single photon detector at the wavelength of 1550 nm has drawn wide attention and achieved vast improvement due to its significant application in quantum information, quantum key distribution, as well as cosmology. A novel infrared up-conversion single photon detector (USPD) at 1550 nm was proposed to work in free-running regime based on the InGaAs/ InP photodetector (PD)- GaAs/AlGaAs LED up-converter and Si single photon avalanche diode (SPAD). In contrast to conventional InGaAs SPAD, the USPD can suppress dark count rate and afterpulsing efficiently without sacrificing the photon detection efficiency (PDE). A high PDE of ~45% can be achieved by optical adhesive coupling between up-converter and Si SPAD. Using a developed analytical model we gave a noise equivalent power of 1.39 × 10 WHz at 200 K for the USPD, which is better than that of InGaAs SPAD. This work provides a new single photon detection scheme for telecom band.
波长为1550纳米的高性能单光子探测器因其在量子信息、量子密钥分发以及宇宙学中的重要应用而备受关注，并取得了巨大进展。基于InGaAs/InP光电探测器（PD）-GaAs/AlGaAs发光二极管上变频器和硅单光子雪崩二极管（SPAD），提出了一种新型的1550纳米红外上转换单光子探测器（USPD），使其能在自由运行模式下工作。与传统的InGaAs SPAD相比，USPD能够有效抑制暗计数率和后脉冲，同时不牺牲光子探测效率（PDE）。通过上变频器与硅SPAD之间的光学胶耦合，可实现约45%的高PDE。利用所建立的分析模型，我们得出USPD在200K时的噪声等效功率为1.39×10WHz，优于InGaAs SPAD。这项工作为电信波段提供了一种新的单光子探测方案。
