Hiskett P A, Buller G S, Loudon A Y, Smith J M, Gontijo I, Walker A C, Townsend P D, Robertson M J
Department of Physics, Heriot-Watt University, Riccarton, Edinburgh EH14 4AS, United Kingdom.
Appl Opt. 2000 Dec 20;39(36):6818-29. doi: 10.1364/ao.39.006818.
The performance of selected, commercially available InGaAs/InP avalanche photodiodes operating in a photon-counting mode at an incident wavelength of 1.55 microm is described. A discussion on the optimum operating conditions and their relationship to the electric field distribution within the device is presented.
描述了在1.55微米入射波长下以光子计数模式工作的选定商用铟镓砷/磷化铟雪崩光电二极管的性能。讨论了最佳工作条件及其与器件内电场分布的关系。
