Farmani Ali, Yavarian Mahdi, Alighanbari Abbas, Miri Mehdi, Sheikhi Mohammad H
Appl Opt. 2017 Nov 10;56(32):8931-8940. doi: 10.1364/AO.56.008931.
A tunable graphene plasmonic Y-branch switch at THz wavelengths is proposed. The effects of magnetic and electric biasing are studied to harness the transmission of the transverse electric and magnetic guided mode resonances. In the structure, hexagonal boron nitride is utilized as a substrate for graphene. The application of hexagonal boron nitride, with the advantages of high mobility and ultralow ohmic loss, introduces a promising alternative substrate for graphene. Analytical and numerical results show that, by slight variation of the doping level in graphene through magnetic and electric biasing, the characteristics of the propagation of the guided mode resonances can be manipulated. A large extinction ratio of 40 dB at a wavelength of 60 μm is obtained. Besides, the proposed switch shows a low insertion loss of about 1 dB and a relatively large optical bandwidth of 1 μm. The electric biasing is of the order of 0.1 mV. Additionally, with the presence of magnetic biasing, a compact switch with a size of 25 μm is achieved. Showing a high extinction ratio, low insertion loss, and compact size, the proposed switch can find potential applications in graphene plasmonics integrated devices.
提出了一种太赫兹波长下的可调谐石墨烯等离子体Y分支开关。研究了磁偏置和电偏置的影响,以控制横向电和磁导模共振的传输。在该结构中,六方氮化硼被用作石墨烯的衬底。六方氮化硼具有高迁移率和超低欧姆损耗的优点,为石墨烯引入了一种很有前景的替代衬底。分析和数值结果表明,通过磁偏置和电偏置对石墨烯掺杂水平进行微小变化,可以操纵导模共振的传播特性。在波长为60μm时获得了40dB的大消光比。此外,所提出的开关显示出约1dB的低插入损耗和1μm的相对大的光学带宽。电偏置为0.1mV量级。此外,在存在磁偏置的情况下,实现了尺寸为25μm的紧凑型开关。所提出的开关具有高消光比、低插入损耗和紧凑尺寸,可在石墨烯等离子体集成器件中找到潜在应用。