Bouravleuv A, Ilkiv I, Reznik R, Kotlyar K, Soshnikov I, Cirlin G, Brunkov P, Kirilenko D, Bondarenko L, Nepomnyaschiy A, Gruznev D, Zotov A, Saranin A, Dhaka V, Lipsanen H
St. Petersburg Academic University RAS, Khlopina 8/3, 194021 St. Petersburg, Russia. Ioffe Institute RAS, Politekhnicheskaya 29, 194021 St.Petersburg, Russia. Institute for Analytical Instrumentation RAS, Ivana Chernykh 31-33, 198095 St. Petersburg, Russia. St. Petersburg Electrotechnical University, Professora Popova 5, 197376 St. Petersburg, Russia. Aalto University, Tietotie 3, FI-02150 Espoo, Finland.
Nanotechnology. 2018 Jan 26;29(4):045602. doi: 10.1088/1361-6528/aa9ab1.
We present a new method for the deposition of colloidal Au nanoparticles on the surface of silicon substrates based on short-time Ar plasma treatment without the use of any polymeric layers. The elaborated method is compatible with molecular beam epitaxy, which allowed us to carry out the detailed study of GaAs nanowire synthesis on Si(111) substrates using colloidal Au nanoparticles as seeds for their growth. The results obtained elucidated the causes of the difference between the initial nanoparticle sizes and the diameters of the grown nanowires.
