• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

单轴压缩对砷化镓纳米线太阳能电池的影响。

Effect of the Uniaxial Compression on the GaAs Nanowire Solar Cell.

作者信息

Alekseev Prokhor A, Sharov Vladislav A, Borodin Bogdan R, Dunaevskiy Mikhail S, Reznik Rodion R, Cirlin George E

机构信息

Ioffe Institute, 194021 Saint-Petersburg, Russia.

Alferov University, 194021 Saint-Petersburg, Russia.

出版信息

Micromachines (Basel). 2020 Jun 10;11(6):581. doi: 10.3390/mi11060581.

DOI:10.3390/mi11060581
PMID:32532075
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7345117/
Abstract

Research regarding ways to increase solar cell efficiency is in high demand. Mechanical deformation of a nanowire (NW) solar cell can improve its efficiency. Here, the effect of uniaxial compression on GaAs nanowire solar cells was studied via conductive atomic force microscopy (C-AFM) supported by numerical simulation. C-AFM I-V curves were measured for wurtzite p-GaAs NW grown on p-Si substrate. Numerical simulations were performed considering piezoresistance and piezoelectric effects. Solar cell efficiency reduction of 50% under a -0.5% strain was observed. The analysis demonstrated the presence of an additional fixed electrical charge at the NW/substrate interface, which was induced due to mismatch between the crystal lattices, thereby affecting the efficiency. Additionally, numerical simulations regarding the p-n GaAs NW solar cell under uniaxial compression were performed, showing that solar efficiency could be controlled by mechanical deformation and configuration of the wurtzite and zinc blende p-n segments in the NW. The relative solar efficiency was shown to be increased by 6.3% under -0.75% uniaxial compression. These findings demonstrate a way to increase efficiency of GaAs NW-based solar cells via uniaxial mechanical compression.

摘要

对于提高太阳能电池效率方法的研究需求很高。纳米线(NW)太阳能电池的机械变形可以提高其效率。在此,通过数值模拟支持的导电原子力显微镜(C-AFM)研究了单轴压缩对GaAs纳米线太阳能电池的影响。对生长在p-Si衬底上的纤锌矿p-GaAs NW测量了C-AFM的I-V曲线。考虑了压阻效应和压电效应进行了数值模拟。观察到在-0.5%应变下太阳能电池效率降低了50%。分析表明在NW/衬底界面存在额外的固定电荷,这是由于晶格失配引起的,从而影响了效率。此外,对单轴压缩下的p-n GaAs NW太阳能电池进行了数值模拟,结果表明太阳能效率可以通过NW中纤锌矿和闪锌矿p-n段的机械变形和配置来控制。在-0.75%单轴压缩下,相对太阳能效率提高了6.3%。这些发现展示了一种通过单轴机械压缩提高基于GaAs NW的太阳能电池效率的方法。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a660/7345117/bf97164d9272/micromachines-11-00581-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a660/7345117/4b1cbdc5e882/micromachines-11-00581-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a660/7345117/f355664cfdc9/micromachines-11-00581-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a660/7345117/869918774968/micromachines-11-00581-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a660/7345117/51a50120ad88/micromachines-11-00581-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a660/7345117/8278ec72bd9f/micromachines-11-00581-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a660/7345117/6335e590db25/micromachines-11-00581-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a660/7345117/bf97164d9272/micromachines-11-00581-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a660/7345117/4b1cbdc5e882/micromachines-11-00581-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a660/7345117/f355664cfdc9/micromachines-11-00581-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a660/7345117/869918774968/micromachines-11-00581-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a660/7345117/51a50120ad88/micromachines-11-00581-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a660/7345117/8278ec72bd9f/micromachines-11-00581-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a660/7345117/6335e590db25/micromachines-11-00581-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a660/7345117/bf97164d9272/micromachines-11-00581-g007.jpg

相似文献

1
Effect of the Uniaxial Compression on the GaAs Nanowire Solar Cell.单轴压缩对砷化镓纳米线太阳能电池的影响。
Micromachines (Basel). 2020 Jun 10;11(6):581. doi: 10.3390/mi11060581.
2
High-Performance GaAs Nanowire Solar Cells for Flexible and Transparent Photovoltaics.用于柔性透明光伏的高性能砷化镓纳米线太阳能电池。
ACS Appl Mater Interfaces. 2015 Sep 16;7(36):20454-9. doi: 10.1021/acsami.5b06452. Epub 2015 Sep 1.
3
GaAs nanowire/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) hybrid solar cells.砷化镓纳米线/聚(3,4-亚乙基二氧噻吩):聚(苯乙烯磺酸盐)杂化太阳能电池。
Nanotechnology. 2010 Jul 16;21(28):285203. doi: 10.1088/0957-4484/21/28/285203. Epub 2010 Jun 18.
4
Tandem Solar Cells Using GaAs Nanowires on Si: Design, Fabrication, and Observation of Voltage Addition.使用硅上砷化镓纳米线的串联太阳能电池:电压相加的设计、制造和观察。
Nano Lett. 2015 Nov 11;15(11):7217-24. doi: 10.1021/acs.nanolett.5b03890. Epub 2015 Nov 2.
5
Surface effects on the atomic and electronic structure of unpassivated GaAs nanowires.表面效应对未钝化 GaAs 纳米线的原子和电子结构的影响。
ACS Nano. 2010 Oct 26;4(10):6021-31. doi: 10.1021/nn1015488.
6
Engineering parallel and perpendicular polarized photoluminescence from a single semiconductor nanowire by crystal phase control.通过控制晶体相,从单个半导体纳米线中获得平行和垂直偏振的光致发光。
Nano Lett. 2010 Aug 11;10(8):2927-33. doi: 10.1021/nl101087e.
7
Nanoscale investigation of a radial p-n junction in self-catalyzed GaAs nanowires grown on Si (111).纳米尺度下自催化 GaAs 纳米线在 Si(111)上的径向 p-n 结研究。
Nanoscale. 2018 Nov 8;10(43):20207-20217. doi: 10.1039/c8nr03827a.
8
GaAs/GaInP nanowire solar cell on Si with state-of-the-art and quasi-Fermi level splitting.基于硅的具有先进技术和准费米能级分裂的砷化镓/磷化镓铟纳米线太阳能电池。
Nanoscale. 2022 Sep 15;14(35):12722-12735. doi: 10.1039/d2nr02652j.
9
Control of Conductivity of InGaAs Nanowires by Applied Tension and Surface States.通过施加张力和表面态控制铟镓砷纳米线的电导率
Nano Lett. 2019 Jul 10;19(7):4463-4469. doi: 10.1021/acs.nanolett.9b01264. Epub 2019 Jun 26.
10
Detailed balance analysis of vertical GaAs nanowire array solar cells: exceeding the Shockley Queisser limit.垂直GaAs纳米线阵列太阳能电池的详细平衡分析:超越肖克利-奎伊瑟极限
Opt Express. 2022 May 9;30(10):16145-16158. doi: 10.1364/OE.455663.

引用本文的文献

1
About the Shape of the Crystallization Front of the Semiconductor Nanowires.关于半导体纳米线结晶前沿的形状。
ACS Omega. 2023 Feb 23;8(9):8263-8275. doi: 10.1021/acsomega.2c06475. eCollection 2023 Mar 7.

本文引用的文献

1
Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch.通过在具有大晶格失配的核壳纳米线中进行应变工程实现广泛可调谐的砷化镓带隙。
Nat Commun. 2019 Jun 26;10(1):2793. doi: 10.1038/s41467-019-10654-7.
2
Control of Conductivity of InGaAs Nanowires by Applied Tension and Surface States.通过施加张力和表面态控制铟镓砷纳米线的电导率
Nano Lett. 2019 Jul 10;19(7):4463-4469. doi: 10.1021/acs.nanolett.9b01264. Epub 2019 Jun 26.
3
Atomic Step Flow on a Nanofacet.纳米小面的原子台阶流。
Phys Rev Lett. 2018 Oct 19;121(16):166101. doi: 10.1103/PhysRevLett.121.166101.
4
Optimizing the yield of A-polar GaAs nanowires to achieve defect-free zinc blende structure and enhanced optical functionality.优化 A 极性 GaAs 纳米线的产率,以实现无缺陷的闪锌矿结构和增强的光学功能。
Nanoscale. 2018 Sep 20;10(36):17080-17091. doi: 10.1039/c8nr05787g.
5
Unified mechanism of the surface Fermi level pinning in III-As nanowires.III-砷纳米线中表面费米能级钉扎的统一机制。
Nanotechnology. 2018 Aug 3;29(31):314003. doi: 10.1088/1361-6528/aac480. Epub 2018 May 14.
6
New method for MBE growth of GaAs nanowires on silicon using colloidal Au nanoparticles.
Nanotechnology. 2018 Jan 26;29(4):045602. doi: 10.1088/1361-6528/aa9ab1.
7
Enhanced Solar Cell Conversion Efficiency of InGaN/GaN Multiple Quantum Wells by Piezo-Phototronic Effect.通过压光电子效应提高 InGaN/GaN 多量子阱太阳能电池的转换效率。
ACS Nano. 2017 Sep 26;11(9):9405-9412. doi: 10.1021/acsnano.7b04935. Epub 2017 Sep 8.
8
Tandem Solar Cells Using GaAs Nanowires on Si: Design, Fabrication, and Observation of Voltage Addition.使用硅上砷化镓纳米线的串联太阳能电池:电压相加的设计、制造和观察。
Nano Lett. 2015 Nov 11;15(11):7217-24. doi: 10.1021/acs.nanolett.5b03890. Epub 2015 Nov 2.
9
Inducing a direct-to-pseudodirect bandgap transition in wurtzite GaAs nanowires with uniaxial stress.在具有单轴应力的纤锌矿 GaAs 纳米线中诱导直接到赝直接能带隙跃迁。
Nat Commun. 2014 Apr 10;5:3655. doi: 10.1038/ncomms4655.
10
Strong Schottky barrier reduction at Au-catalyst/GaAs-nanowire interfaces by electric dipole formation and Fermi-level unpinning.通过形成电偶极子和费米能级钉扎,Au 催化剂/GaAs 纳米线界面处的肖特基势垒大幅降低。
Nat Commun. 2014;5:3221. doi: 10.1038/ncomms4221.