Urkude R R, Rawat R, Palikundwar U A
X-ray Research Laboratory, Department of Physics, RTM Nagpur University, Nagpur-440033, India.
J Phys Condens Matter. 2017 Dec 13;29(49):495602. doi: 10.1088/1361-648X/aa9648. Epub 2017 Nov 15.
We have performed a systematic parallel field magnetotransport studies of (Bi Sb )Te to understand the temperature and impurity effect on the interference of bulk conductance on the surface states of highly insulating topologically insulating compound BiTe. The compound exhibits a weak antilocalization effect (WAL) at low temperature and low magnetic field. WAL weakens and a weak localization effect is observed to be developed in the compound with the increase in temperature due to the creation of topologically trivial 2D electron gas states. Strong interlayer interference and coupling of bulk carriers with surface states are observed at low temperature. A similar temperature effect is observed for all concentrations of Sb. Topologically protected surface states enhance with the increase in Sb contents up to x = 0.3; however, a further increase in Sb concentration leads to a decrease in surface states. The data has been analysed via the generalised Altshuler and Aronov model for parallel field transport anticipating weak antilocalization and interlayer interference.
我们对（BiSb）Te进行了系统的平行场磁输运研究，以了解温度和杂质对高绝缘拓扑绝缘化合物BiTe表面态上体电导干涉的影响。该化合物在低温和低磁场下表现出弱反局域化效应（WAL）。由于拓扑平凡二维电子气态的产生，随着温度升高，WAL减弱，且在该化合物中观察到弱局域化效应的发展。在低温下观察到强层间干涉以及体载流子与表面态的耦合。对于所有Sb浓度都观察到类似的温度效应。随着Sb含量增加到x = 0.3，拓扑保护的表面态增强；然而，Sb浓度的进一步增加导致表面态减少。通过广义的阿尔特舒勒和阿罗诺夫平行场输运模型对数据进行了分析，该模型预期存在弱反局域化和层间干涉。
