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拓扑非平庸半金属LuPdBi中的弱反局域化效应和非中心对称超导性

Weak antilocalization effect and noncentrosymmetric superconductivity in a topologically nontrivial semimetal LuPdBi.

作者信息

Xu Guizhou, Wang Wenhong, Zhang Xiaoming, Du Yin, Liu Enke, Wang Shouguo, Wu Guangheng, Liu Zhongyuan, Zhang Xi Xiang

机构信息

State Key Laboratory for Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.

State Key Laboratory of Metastable Material Sciences and Technology, Yanshan University, Qinhuangdao 066004, P. R. China.

出版信息

Sci Rep. 2014 Jul 21;4:5709. doi: 10.1038/srep05709.

Abstract

A large number of half-Heusler compounds have been recently proposed as three-dimensional (3D) topological insulators (TIs) with tunable physical properties. However, no transport measurements associated with the topological surface states have been observed in these half-Heusler candidates due to the dominating contribution from bulk electrical conductance. Here we show that, by reducing the mobility of bulk carriers, a two-dimensional (2D) weak antilocalization (WAL) effect, one of the hallmarks of topological surface states, was experimentally revealed from the tilted magnetic field dependence of magnetoconductance in a topologically nontrivial semimetal LuPdBi. Besides the observation of a 2D WAL effect, a superconducting transition was revealed at Tc ~ 1.7 K in the same bulk LuPdBi. Quantitative analysis within the framework of a generalized BCS theory leads to the conclusion that the noncentrosymmetric superconductivity of LuPdBi is fully gapped with a possibly unconventional pairing character. The co-existence of superconductivity and the transport signature of topological surface states in the same bulk alloy suggests that LuPdBi represents a very promising candidate as a topological superconductor.

摘要

最近,大量的半赫斯勒化合物被提出作为具有可调物理性质的三维(3D)拓扑绝缘体(TI)。然而,由于体电导的主导贡献,在这些半赫斯勒候选材料中尚未观察到与拓扑表面态相关的输运测量结果。在此,我们表明,通过降低体载流子的迁移率,从拓扑非平凡半金属LuPdBi中磁电导对倾斜磁场的依赖性实验揭示了二维(2D)弱反局域化(WAL)效应,这是拓扑表面态的标志之一。除了观察到二维WAL效应外,在相同的块状LuPdBi中还揭示了在Tc ~ 1.7 K时的超导转变。在广义BCS理论框架内的定量分析得出结论,LuPdBi的非中心对称超导是完全能隙的,具有可能非传统的配对特征。在同一块状合金中超导性与拓扑表面态的输运特征共存表明,LuPdBi作为拓扑超导体是一个非常有前途的候选材料。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0b88/4104393/e75972cf3c19/srep05709-f1.jpg

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