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卷对卷生产层状二硫化钼:基于二维半导体的工业应用平台。

Roll-to-Roll Production of Layer-Controlled Molybdenum Disulfide: A Platform for 2D Semiconductor-Based Industrial Applications.

机构信息

Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), Yuseong Post Office Box 107, Daejeon, 305-600, Republic of Korea.

School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea.

出版信息

Adv Mater. 2018 Feb;30(5). doi: 10.1002/adma.201705270. Epub 2017 Nov 27.

Abstract

A facile methodology for the large-scale production of layer-controlled MoS layers on an inexpensive substrate involving a simple coating of single source precursor with subsequent roll-to-roll-based thermal decomposition is developed. The resulting 50 cm long MoS layers synthesized on Ni foils possess excellent long-range uniformity and optimum stoichiometry. Moreover, this methodology is promising because it enables simple control of the number of MoS layers by simply adjusting the concentration of (NH ) MoS . Additionally, the capability of the MoS for practical applications in electronic/optoelectronic devices and catalysts for hydrogen evolution reaction is verified. The MoS -based field effect transistors exhibit unipolar n-channel transistor behavior with electron mobility of 0.6 cm V s and an on-off ratio of ≈10³. The MoS -based visible-light photodetectors are fabricated in order to evaluate their photoelectrical properties, obtaining an 100% yield for active devices with significant photocurrents and extracted photoresponsivity of ≈22 mA W . Moreover, the MoS layers on Ni foils exhibit applicable catalytic activity with observed overpotential of ≈165 mV and a Tafel slope of 133 mV dec . Based on these results, it is envisaged that the cost-effective methodology will trigger actual industrial applications, as well as novel research related to 2D semiconductor-based multifaceted applications.

摘要

开发了一种在廉价衬底上大规模生产层状控制 MoS 层的简便方法,涉及用单源前体制备简单涂层,然后进行基于卷对卷的热分解。在 Ni 箔上合成的 50 cm 长 MoS 层具有优异的长程均匀性和最佳的化学计量比。此外,由于该方法能够通过简单地调整 (NH ) MoS 的浓度来简单地控制 MoS 层的数量,因此具有很大的应用前景。此外,还验证了 MoS 在电子/光电设备和析氢反应催化剂中的实际应用能力。基于 MoS 的场效应晶体管表现出单极性 n 沟道晶体管行为,电子迁移率为 0.6 cm V s,开关比约为 10³。为了评估其光电性能,制造了基于 MoS 的可见光光电探测器,获得了具有显著光电流和提取光响应率约为 22 mA W 的有源器件的 100%产率。此外,Ni 箔上的 MoS 层表现出适用的催化活性,观察到的过电势约为 165 mV,塔菲尔斜率为 133 mV dec。基于这些结果,可以预见,这种具有成本效益的方法将引发实际的工业应用,以及与基于二维半导体的多方面应用相关的新研究。

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