Chefonov O V, Ovchinnikov A V, Romashevskiy S A, Chai X, Ozaki T, Savel'ev A B, Agranat M B, Fortov V E
Opt Lett. 2017 Dec 1;42(23):4889-4892. doi: 10.1364/OL.42.004889.
The results of high-field terahertz transmission experiments on n-doped silicon (carrier concentration of 8.7×10 cm) are presented. We use terahertz pulses with electric field strengths up to 3.1 MV cm and a pulse duration of 700 fs. A huge transmittance enhancement of ∼90 times is observed with increasing of the terahertz electric field strengths within the range of 1.5-3.1 MV cm.
