Ovchinnikov A V, Chefonov O V, Agranat M B, Kudryavtsev A V, Mishina E D, Yurkevich A A
Opt Express. 2021 Aug 2;29(16):26093-26102. doi: 10.1364/OE.430752.
We report the results of experimental studies and numerical simulation of the dynamics of the electron-hole pairs formation in silicon under the action of a two-period terahertz pulse with a maximum electric field strength of up to 23 MV/cm. It is shown that an inhomogeneous distribution of the charge carrier concentration over the depth of the silicon sample is formed, which persists for several microseconds. This inhomogeneity is formed due to a sharp increase in the rate of filling the conduction band with free carriers in the subsurface input layer of the silicon wafer, which occurs at a field strength above 15 MV/cm.
我们报告了在最大电场强度高达23 MV/cm的双周期太赫兹脉冲作用下，硅中电子 - 空穴对形成动力学的实验研究和数值模拟结果。结果表明，在硅样品深度上形成了电荷载流子浓度的不均匀分布，这种分布会持续几微秒。这种不均匀性是由于在硅晶片的亚表面输入层中，自由载流子填充导带的速率急剧增加而形成的，这发生在电场强度高于15 MV/cm时。
