Wei Tingting, Kanki Teruo, Chikanari Masashi, Uemura Takafumi, Sekitani Tsuyoshi, Tanaka Hidekazu
Institute of Scientific and Industrial Research, Osaka Universit, Ibaraki, Osaka, 567-0047, Japan.
Faculty of Science, Kunming University of Science and Technology, Kunming, 650093, China.
Sci Rep. 2017 Dec 8;7(1):17215. doi: 10.1038/s41598-017-17468-x.
Field-effect transistors using correlated electron materials with an electronic phase transition pave a new avenue to realize steep slope switching, to overcome device size limitations and to investigate fundamental science. Here, we present a new finding in gate-bias-induced electronic transport switching in a correlated electron material, i.e., a VO nanowire channel through a hybrid gate, which showed an enhancement in the resistive modulation efficiency accompanied by expansion of metallic nano-domains in an insulating matrix by applying gate biases near the metal-insulator transition temperature. Our results offer an understanding of the innate ability of coexistence state of metallic and insulating domains in correlated materials through carrier tuning and serve as a valuable reference for further research into the development of correlated materials and their devices.
使用具有电子相变的关联电子材料的场效应晶体管为实现陡坡开关、克服器件尺寸限制以及研究基础科学开辟了一条新途径。在此，我们展示了在一种关联电子材料（即通过混合栅极的VO纳米线通道）中栅极偏置诱导的电子输运开关方面的一项新发现，即在金属 - 绝缘体转变温度附近施加栅极偏置时，电阻调制效率提高，同时绝缘基质中的金属纳米域扩大。我们的结果有助于通过载流子调控理解关联材料中金属和绝缘域共存状态的内在能力，并为关联材料及其器件开发的进一步研究提供有价值的参考。
