采用低温改进方法的氧化钕阻变随机存取存储器器件的双极开关特性

Bipolar Switching Properties of Neodymium Oxide RRAM Devices Using by a Low Temperature Improvement Method.

作者信息

Chen Kai-Huang, Kao Ming-Cheng, Huang Shou-Jen, Li Jian-Zhi

机构信息

Department of Electrical Engineering and Computer Science, Tung Fang Design University, Kaohsiung 82941, Taiwan.

Department of Electronic Engineering, Hsiuping University of Science and Technology, Taichung 41280, Taiwan.

出版信息

Materials (Basel). 2017 Dec 12;10(12):1415. doi: 10.3390/ma10121415.

DOI:10.3390/ma10121415

PMID:29231867

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5744350/

Abstract

Bipolar resistive switching properties and endurance switching behavior of the neodymium oxide (Nd₂O₃) thin films resistive random access memory (RRAM) devices for a high resistive status/low resistive status (HRS/LRS) using a low temperature supercritical carbon dioxide fluid (SCF) improvement post-treatment process were investigated. Electrical and physical properties improvement of Nd₂O₃ thin films were measured by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and current versus voltage () measurement. The metal-like behavior of ohmic conduction mechanism and metallic cluster reaction of hopping conduction mechanism in initial metallic filament path forming process of the SCF-treated thin films RRAM devices was assumed and discussed. Finally, the electrical conduction mechanism of the thin films RRAM derives for set/reset was also discussed and verified in filament path physical model.

摘要

研究了采用低温超临界二氧化碳流体（SCF）改进后处理工艺的氧化钕（Nd₂O₃）薄膜电阻式随机存取存储器（RRAM）器件在高阻态/低阻态（HRS/LRS）下的双极电阻开关特性和耐久性开关行为。通过X射线衍射（XRD）、扫描电子显微镜（SEM）、X射线光电子能谱（XPS）以及电流-电压（I-V）测量来测定Nd₂O₃薄膜的电学和物理性能改善情况。假定并讨论了在SCF处理的薄膜RRAM器件初始金属丝形成过程中，欧姆传导机制的类金属行为和跳跃传导机制的金属簇反应。最后，还在金属丝路径物理模型中讨论并验证了薄膜RRAM的设置/重置的导电机制。