不同氧浓度环境下双极开关Gd:SiOx阻变随机存取存储器器件的肖特基发射距离和势垒高度特性

Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments.

作者信息

Chen Kai-Huang, Tsai Tsung-Ming, Cheng Chien-Min, Huang Shou-Jen, Chang Kuan-Chang, Liang Shu-Ping, Young Tai-Fa

机构信息

Department of Electrical Engineering and Computer Science, Tung Fang Design University, Kaohsiung 829, Taiwan.

Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 829, Taiwan.

出版信息

Materials (Basel). 2017 Dec 28;11(1):43. doi: 10.3390/ma11010043.

DOI:10.3390/ma11010043

PMID:29283368

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5793541/

Abstract

In this study, the hopping conduction distance and bipolar switching properties of the Gd:SiOx thin film by (radio frequency, rf) rf sputtering technology for applications in RRAM devices were calculated and investigated. To discuss and verify the electrical switching mechanism in various different constant compliance currents, the typical current versus applied voltage () characteristics of gadolinium oxide RRAM devices was transferred and fitted. Finally, the transmission electrons' switching behavior between the TiN bottom electrode and Pt top electrode in the initial metallic filament forming process of the gadolinium oxide thin film RRAM devices for low resistance state (LRS)/high resistance state (HRS) was described and explained in a simulated physical diagram model.

摘要

在本研究中，计算并研究了采用射频（rf）溅射技术制备的用于RRAM器件的Gd:SiOx薄膜的跳跃传导距离和双极开关特性。为了讨论和验证在各种不同恒定顺从电流下的电开关机制，对氧化钆RRAM器件的典型电流与施加电压（）特性进行了转换和拟合。最后，在一个模拟物理图模型中描述并解释了氧化钆薄膜RRAM器件在低电阻状态（LRS）/高电阻状态（HRS）初始金属细丝形成过程中，TiN底部电极和Pt顶部电极之间的传输电子的开关行为。