使用透明氧化铟锡电极的Gd:SiO2电阻式随机存取存储器（RRAM）器件的双极开关特性的光照效应

Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode.

作者信息

Chen Kai-Huang, Chang Kuan-Chang, Chang Ting-Chang, Tsai Tsung-Ming, Liang Shu-Ping, Young Tai-Fa, Syu Yong-En, Sze Simon M

机构信息

Department of Electrical Engineering and Computer Science, Tung Fang Design Institute, Kaohsiung, Taiwan.

Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan.

出版信息

Nanoscale Res Lett. 2016 Dec;11(1):224. doi: 10.1186/s11671-016-1431-8. Epub 2016 Apr 27.

DOI:10.1186/s11671-016-1431-8

PMID:27117634

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4846604/

Abstract

To discuss the optoelectronic effect on resistive random access memory (RRAM) devices, the bipolar switching properties and electron-hole pair generation behavior in the transparent indium tin oxide (ITO) electrode of Gd:SiO2 thin films under the ultraviolet (λ = 400 nm) and red-light (λ = 770 nm) illumination for high resistance state (HRS)/low resistance state (LRS) was observed and investigated. In dark environment, the Gd:SiO2 RRAM devices exhibited the ohmic conduction mechanism for LRS, exhibited the Schottky emission conduction and Poole-Frankel conduction mechanism for HRS. For light illumination effect, the operation current of the Gd:SiO2 RRAM devices for HRS/LRS was slightly increased. Finally, the electron-hole pair transport mechanism, switching conduction diagram, and energy band of the RRAM devices will be clearly demonstrated and explained.

摘要

为了探讨光电效应在电阻式随机存取存储器（RRAM）器件中的作用，观察并研究了在紫外光（λ = 400 nm）和红光（λ = 770 nm）照射下，Gd:SiO2薄膜透明氧化铟锡（ITO）电极在高阻态（HRS）/低阻态（LRS）下的双极开关特性和电子-空穴对产生行为。在黑暗环境中，Gd:SiO2 RRAM器件在低阻态表现出欧姆传导机制，在高阻态表现出肖特基发射传导和普尔-弗兰克尔传导机制。对于光照效应，Gd:SiO2 RRAM器件在高阻态/低阻态下的工作电流略有增加。最后，将清晰地展示和解释RRAM器件的电子-空穴对传输机制、开关传导图和能带。