Wang Yao-Chin, Chen Kai-Huang, Kao Ming-Cheng, Chen Hsin-Chin, Cheng Chien-Min, Huang Hong-Xiang, Huang Kai-Chi
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 83347, Taiwan.
Graduate Institute of Aeronautics, Department of Information and Communication Engineering, Chaoyang University of Technology, Taichung 413310, Taiwan.
Nanomaterials (Basel). 2025 Apr 14;15(8):602. doi: 10.3390/nano15080602.
In this manuscript, strontium barium titanate (BST) ferroelectric memory film materials for applications in the feasibility of applying to non-volatile RAM devices were obtained and compared. Solutions were synthesized with a proportional ratio and through the deposition of BST films on titanium nitride/silicon substrates using the sol-gel method, using rapid thermal annealing for defect repair and re-crystallization processing. The crystallization structure and surface morphology of annealed and as-deposited BST films were obtained by XPS, XRD, and SEM measurements. Additionally, the ferroelectric and resistive switching properties for the memory window, the maximum capacitance, and the leakage current were examined for Al/BST/TiN and Cu/BST/TiN structure memory devices. In addition, the first-order reaction equation of the decay reaction behavior for the BST film RRAM devices in the reset state revealed that r=0.19[O2-]1. Finally, the Cu/BST/TiN and Al/BST/TiN structures of the ferroelectric BST films RRAM devices exhibited good memory window properties, bipolar switching properties, and non-volatile properties for applications in non-volatile memory devices.
在本手稿中，获得并比较了用于非易失性随机存取存储器（RAM）器件的钛酸锶钡（BST）铁电存储薄膜材料的应用可行性。通过按比例合成溶液，并使用溶胶 - 凝胶法在氮化钛/硅衬底上沉积BST薄膜，采用快速热退火进行缺陷修复和再结晶处理。通过XPS、XRD和SEM测量获得了退火前后BST薄膜的结晶结构和表面形貌。此外，对Al/BST/TiN和Cu/BST/TiN结构的存储器件的存储窗口、最大电容和漏电流的铁电和电阻开关特性进行了研究。此外，复位状态下BST薄膜RRAM器件衰减反应行为的一级反应方程表明r = 0.19[O2-]1。最后，铁电BST薄膜RRAM器件的Cu/BST/TiN和Al/BST/TiN结构在非易失性存储器件应用中表现出良好的存储窗口特性、双极开关特性和非易失性特性。
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