Zhu Tian-Fei, Liu Zongchen, Liu Zhangcheng, Li Fengnan, Zhang Minghui, Wang Wei, Wen Feng, Wang Jingjing, Bu RenAn, Zhang JingWen, Wang Hong-Xing
Opt Express. 2017 Dec 11;25(25):31586-31594. doi: 10.1364/OE.25.031586.
A monolithic diamond photodetector with microlenses is fabricated by etching microlens arrays (MLAs) on single crystal diamond surface and patterning tungsten electrode strips on the edge of these arrays. Firstly, compact MLAs are etched on half of diamond sample surface by thermal reflow method. Secondly, via magnetron sputtering technique, two sets of interdigitated tungsten electrodes are patterned on the sample surface, one set is on the edge of MLAs, the other set is on the planar area. The optoelectronic performances of photodetectors have been investigated and indicated that the photocurrent of microlens photodetector increases by 74.8 percent at 10 V under 220 nm UV light illumination by comparing with that in planar case. Simulations of photodetectors' electrical and optical properties have been carried out, illustrating an improvement of charge collection ability and light absorption efficiency in microlens case. Furthermore, the present device structure can be extended to other semiconductor photodetectors.
一种带有微透镜的单片金刚石光电探测器是通过在单晶金刚石表面蚀刻微透镜阵列(MLA)并在这些阵列的边缘制作钨电极条来制造的。首先,通过热回流法在金刚石样品表面的一半蚀刻致密的微透镜阵列。其次,通过磁控溅射技术,在样品表面制作两组叉指式钨电极,一组在微透镜阵列的边缘,另一组在平面区域。对光电探测器的光电性能进行了研究,结果表明,与平面情况相比,在220nm紫外光照射下,微透镜光电探测器在10V时的光电流增加了74.8%。对光电探测器的电学和光学性质进行了模拟,结果表明在微透镜情况下电荷收集能力和光吸收效率有所提高。此外,目前的器件结构可以扩展到其他半导体光电探测器。