Institut des Sciences Moléculaires d'Orsay (ISMO), CNRS, Univ. Paris Sud, Université Paris-Saclay, 91405, Orsay, France.
Institut FEMTO-ST, Univ. Bourgogne Franche-Comté, CNRS, 15B avenue des Montboucons, 25030, Besançon, France.
Nat Commun. 2017 Dec 20;8(1):2211. doi: 10.1038/s41467-017-02377-4.
Controlling the properties of quantum dots at the atomic scale, such as dangling bonds, is a general motivation as they allow studying various nanoscale processes including atomic switches, charge storage, or low binding energy state interactions. Adjusting the coupling of individual silicon dangling bonds to form a 2D device having a defined function remains a challenge. Here, we exploit the anisotropic interactions between silicon dangling bonds on n-type doped Si(100):H surface to tune their hybridization. This process arises from interactions between the subsurface silicon network and dangling bonds inducing a combination of Jahn-Teller distortions and local charge ordering. A three-pointed star-shaped device prototype is designed. By changing the charge state of this device, its electronic properties are shown to switch reversibly from an ON to an OFF state via local change of its central gap. Our results provide a playground for the study of quantum information at the nanoscale.
在原子尺度上控制量子点的性质，如悬空键，是一个普遍的动机，因为它们允许研究各种纳米尺度的过程，包括原子开关、电荷存储或低结合能态相互作用。调整单个硅悬空键的耦合以形成具有明确定义功能的 2D 器件仍然是一个挑战。在这里，我们利用 n 型掺杂 Si(100):H 表面上硅悬空键之间的各向异性相互作用来调节它们的杂化。这个过程源于亚表面硅网络和悬空键之间的相互作用，导致了 Jahn-Teller 变形和局部电荷有序的组合。设计了一个三点星形器件原型。通过改变该器件的电荷状态，通过其中心间隙的局部变化，其电子性质可以可逆地从 ON 切换到 OFF 状态。我们的结果为在纳米尺度上研究量子信息提供了一个平台。
