Chen Liangliang, Len Kanming, Ma Zhongyuan, Yu Xinyue, Shen Zixiao, You Jiayang, Li Wei, Xu Jun, Xu Ling, Chen Kunji, Feng Duan
School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.
Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
J Phys Chem Lett. 2020 Oct 1;11(19):8451-8458. doi: 10.1021/acs.jpclett.0c01563. Epub 2020 Sep 23.
With the coming of the big data age, the resistive switching memory (RSM) of three-dimensional (3D) high density shows a significant application in information storage and processing due to its simple structure and size-scalable characteristic. However, an electrical initialization process makes the peripheral circuits of 3D integration too complicated to be realized. Here a new forming-free SiC:H-based device can be obtained by tuning the Si dangling bond conductive channel. It is discovered that the forming-free behavior can be ascribed to the Si dangling bonds in the as-deposited SiC:H films. By tuning the number of Si dangling bonds, the forming-free SiC:H RSM exhibits a tunable memory window. The fracture and connection of the Si dangling bond conduction pathway induces the switching from the high-resistance state (HRS) to the low-resistance state (LRS). Our discovery of forming-free SiC:H resistive switching memory with tunable pathway opens a way to the realization of 3D high-density memory.
随着大数据时代的到来，三维（3D）高密度电阻式开关存储器（RSM）因其结构简单和尺寸可扩展的特性，在信息存储和处理方面展现出显著的应用前景。然而，电初始化过程使得3D集成的外围电路过于复杂而难以实现。在此，通过调整硅悬键导电通道，可以获得一种新型的无需形成过程的基于SiC:H的器件。研究发现，这种无需形成过程的行为可归因于沉积态SiC:H薄膜中的硅悬键。通过调整硅悬键的数量，无需形成过程的SiC:H RSM展现出可调的存储窗口。硅悬键传导路径的断裂和连接导致从高阻态（HRS）切换到低阻态（LRS）。我们对具有可调路径的无需形成过程的SiC:H电阻式开关存储器的发现，为实现3D高密度存储器开辟了一条道路。
