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用于电催化的层状钒、铌和钽掺杂硒化钨中金属1T相的形态学效应与稳定性

Morphological Effects and Stabilization of the Metallic 1T Phase in Layered V-, Nb-, and Ta-Doped WSe for Electrocatalysis.

作者信息

Chia Xinyi, Sutrisnoh Nur Ayu Afira, Sofer Zdeněk, Luxa Jan, Pumera Martin

机构信息

Chemistry and Biological Chemistry, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore, 637371, Singapore.

Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28, Prague 6, Czech Republic.

出版信息

Chemistry. 2018 Mar 2;24(13):3199-3208. doi: 10.1002/chem.201704158. Epub 2018 Feb 5.

Abstract

Layered transition-metal dichalcogenides (TMDs) are valued for their electrocatalytic properties toward the hydrogen-evolution reaction (HER) and oxygen-reduction reaction (ORR). One effective strategy to activate the electrocatalytic properties of TMDs is through doping. The optimistic outlook of doped-MoS as an electrocatalyst witnessed in previous reports spurred us to examine the effect of doping WSe with Group 5 transition-metal species, namely V, Nb, and Ta, in aspects of inherent electroactivities and catalysis. Apart from the mild reduction signal unique to the Group 5 transition-metal dopants, the Group 5 transition-metal-doped WSe materials are found to possess largely identical inherent electrochemistry to the undoped WSe with a characteristic anodic peak. Living up to expectations, the Group 5 transition-metal-doped WSe materials exhibit improved electrocatalytic HER efficiency, as evident by the lower HER overpotentials and Tafel slopes relative to undoped WSe . After doping with V, Nb, or Ta species, an increased number of active sites is observed given the distinct changes in morphology from thick bulky pieces in undoped WSe to thinner fragments in doped WSe . Although undoped WSe exists in the semiconducting 2H phase, the Group 5 transition-metal-doped WSe materials are dominated by the metallic 1T phase. Doping WSe with V, Nb, or Ta stabilizes the catalytic 1T phase and appears to induce the transition from the 2H to 1T phase. In contrast to the enhanced HER performance of WSe upon doping, Group 5 transition-metal dopants proved futile in activating the ORR electrocatalytic behavior of WSe , for which the ORR efficiency is unchanged. Therefore, these findings facilitate the understanding of the role of Group 5 transition-metal dopants in the electrochemical and catalytic properties of WSe relative to their morphological features and provide an evaluation of the efficacy of doping TMDs in electrocatalytic applications.

摘要

层状过渡金属二硫属化物(TMDs)因其对析氢反应(HER)和氧还原反应(ORR)的电催化性能而受到重视。激活TMDs电催化性能的一种有效策略是通过掺杂。先前报道中掺杂MoS作为电催化剂的乐观前景促使我们研究用第5族过渡金属物种(即V、Nb和Ta)掺杂WSe在固有电活性和催化方面的效果。除了第5族过渡金属掺杂剂特有的微弱还原信号外,发现第5族过渡金属掺杂的WSe材料在很大程度上具有与未掺杂WSe相同的固有电化学性质,并具有特征性阳极峰。不出所料,第5族过渡金属掺杂的WSe材料表现出提高的电催化HER效率,相对于未掺杂的WSe,HER过电位和塔菲尔斜率更低,这一点很明显。在用V、Nb或Ta物种掺杂后,观察到活性位点数量增加,这是因为形态发生了明显变化:从未掺杂WSe中的厚大块状变为掺杂WSe中的较薄碎片状。尽管未掺杂的WSe以半导体2H相存在,但第5族过渡金属掺杂的WSe材料以金属1T相为主。用V、Nb或Ta掺杂WSe可稳定催化1T相,并似乎诱导了从2H相向1T相的转变。与掺杂后WSe的HER性能增强相反,第5族过渡金属掺杂剂在激活WSe的ORR电催化行为方面被证明是无效的,其ORR效率没有变化。因此,这些发现有助于理解第5族过渡金属掺杂剂在WSe的电化学和催化性能中相对于其形态特征所起的作用,并对掺杂TMDs在电催化应用中的效果进行评估。

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