Micro-Raman imaging on 4H-SiC in contact with the electrode at room temperature.

Raman images (30μm×30μm×180μm) of a bulk 4H-SiC wafer in contact with a Ni/Au electrode film in 100nm/200nm thick were measured with Micro-Raman spectroscopy at room temperature. As the imaging area approached the interface between the SiC and electrode, the center frequency of the E(TO) mode (778cm) immediately declined; in the Raman imaging, relative distribution of compressive residual stress around residual tensile stress, and linewidth were broadened due to crystal distortion. For LOPC (LO-phonon-plasmon-coupled) mode (970cm), center frequency showed variation right next to the interface, while linewidth decreased slowly as the imaging area approached the interface. We evaluated the temperature dependence of the line broadening and the center frequency of the LOPC mode in 4H-SiC in a high-temperature region. Free carrier concentration increased with temperature, and remained almost constant in the center frequency after impurities were ionized completely.