Scuderi Viviana, Calabretta Cristiano, Anzalone Ruggero, Mauceri Marco, La Via Francesco
CNR-IMM, VIII Strada, 5, 95121 Catania, Italy.
STMicroelectronics, Stradale Primosole, 50, 95121 Catania, Italy.
Materials (Basel). 2020 Apr 13;13(8):1837. doi: 10.3390/ma13081837.
We report a comprehensive investigation on stacking faults (SFs) in the 3C-SiC cross-section epilayer. 3C-SiC growth was performed in a horizontal hot-wall chemical vapour deposition (CVD) reactor. After the growth (85 microns thick), the silicon substrate was completely melted inside the CVD chamber, obtaining free-standing 4 inch wafers. A structural characterization and distribution of SFs was performed by μ-Raman spectroscopy and room-temperature μ-photoluminescence. Two kinds of SFs, 4H-like and 6H-like, were identified near the removed silicon interface. Each kind of SFs shows a characteristic photoluminescence emission of the 4H-SiC and 6H-SiC located at 393 and 425 nm, respectively. 4H-like and 6H-like SFs show different distribution along film thickness. The reported results were discussed in relation with the experimental data and theoretical models present in the literature.
我们报告了对3C-SiC横截面外延层中堆垛层错（SFs）的全面研究。3C-SiC生长在卧式热壁化学气相沉积（CVD）反应器中进行。生长（85微米厚）后，硅衬底在CVD腔内完全熔化，得到独立的4英寸晶圆。通过μ-拉曼光谱和室温μ-光致发光对SFs进行了结构表征和分布研究。在去除的硅界面附近识别出两种SFs，即类4H和类6H。每种SFs分别显示出位于393和425nm处的4H-SiC和6H-SiC的特征光致发光发射。类4H和类6H的SFs沿膜厚显示出不同的分布。结合文献中的实验数据和理论模型对所报道的结果进行了讨论。
