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用于薄膜晶体管的溶液法制备的镓锡基氧化物半导体

Solution-Processed Gallium-Tin-Based Oxide Semiconductors for Thin-Film Transistors.

作者信息

Zhang Xue, Lee Hyeonju, Kim Jungwon, Kim Eui-Jik, Park Jaehoon

机构信息

Department of Electronic Engineering, Hallym University, Chuncheon 24252, Korea.

Department of Environmental Sciences & Biotechnology, Hallym University, Chuncheon 24252, Korea.

出版信息

Materials (Basel). 2017 Dec 28;11(1):46. doi: 10.3390/ma11010046.

DOI:10.3390/ma11010046
PMID:29283408
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5793544/
Abstract

We investigated the effects of gallium (Ga) and tin (Sn) compositions on the structural and chemical properties of Ga-Sn-mixed (Ga:Sn) oxide films and the electrical properties of Ga:Sn oxide thin-film transistors (TFTs). The thermogravimetric analysis results indicate that solution-processed oxide films can be produced via thermal annealing at 500 °C. The oxygen deficiency ratio in the Ga:Sn oxide film increased from 0.18 (Ga oxide) and 0.30 (Sn oxide) to 0.36, while the X-ray diffraction peaks corresponding to Sn oxide significantly reduced. The Ga:Sn oxide film exhibited smaller grains compared to the nanocrystalline Sn oxide film, while the Ga oxide film exhibited an amorphous morphology. We found that the electrical properties of TFTs significantly improve by mixing Ga and Sn. Here, the optimum weight ratio of the constituents in the mixture of Ga and Sn precursor sols was determined to be 1.0:0.9 (Ga precursor sol:Sn precursor sol) for application in the solution-processed Ga:Sn oxide TFTs. In addition, when the Ga(1.0):Sn(0.9) oxide film was thermally annealed at 900 °C, the field-effect mobility of the TFT was notably enhanced from 0.02 to 1.03 cm²/Vs. Therefore, the mixing concentration ratio and annealing temperature are crucial for the chemical and morphological properties of solution-processed Ga:Sn oxide films and for the TFT performance.

摘要

我们研究了镓（Ga）和锡（Sn）的组成对Ga-Sn混合（Ga:Sn）氧化物薄膜的结构和化学性质以及Ga:Sn氧化物薄膜晶体管（TFT）电学性质的影响。热重分析结果表明，通过在500°C下进行热退火可以制备溶液处理的氧化物薄膜。Ga:Sn氧化物薄膜中的氧缺陷率从0.18（Ga氧化物）和0.30（Sn氧化物）增加到0.36，而对应于Sn氧化物的X射线衍射峰显著降低。与纳米晶Sn氧化物薄膜相比，Ga:Sn氧化物薄膜表现出更小的晶粒，而Ga氧化物薄膜呈现出非晶形态。我们发现，通过混合Ga和Sn，TFT的电学性质得到显著改善。在此，对于溶液处理的Ga:Sn氧化物TFT应用，Ga和Sn前驱体溶胶混合物中各成分的最佳重量比确定为1.0:0.9（Ga前驱体溶胶:Sn前驱体溶胶）。此外，当Ga(1.0):Sn(0.9)氧化物薄膜在900°C下进行热退火时，TFT的场效应迁移率从0.02显著提高到1.03 cm²/Vs。因此，混合浓度比和退火温度对于溶液处理的Ga:Sn氧化物薄膜的化学和形态性质以及TFT性能至关重要。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/73a2/5793544/c30c53fba6f1/materials-11-00046-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/73a2/5793544/2802b82da770/materials-11-00046-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/73a2/5793544/caf35c4ba5f1/materials-11-00046-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/73a2/5793544/076603e80292/materials-11-00046-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/73a2/5793544/132daf68180d/materials-11-00046-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/73a2/5793544/fd6cb107f83b/materials-11-00046-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/73a2/5793544/7fcab963f253/materials-11-00046-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/73a2/5793544/90f1c9439bbf/materials-11-00046-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/73a2/5793544/336d11e5f9a3/materials-11-00046-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/73a2/5793544/c30c53fba6f1/materials-11-00046-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/73a2/5793544/2802b82da770/materials-11-00046-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/73a2/5793544/caf35c4ba5f1/materials-11-00046-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/73a2/5793544/076603e80292/materials-11-00046-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/73a2/5793544/132daf68180d/materials-11-00046-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/73a2/5793544/fd6cb107f83b/materials-11-00046-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/73a2/5793544/7fcab963f253/materials-11-00046-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/73a2/5793544/90f1c9439bbf/materials-11-00046-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/73a2/5793544/336d11e5f9a3/materials-11-00046-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/73a2/5793544/c30c53fba6f1/materials-11-00046-g009.jpg

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