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耦合应变电子-光热效应。

The Coupled Straintronic-Photothermic Effect.

机构信息

Small Systems Laboratory, Department of Mechanical Engineering, Worcester Polytechnic Institute, Worcester, MA, 01609, USA.

Conn Center for Renewable Energy Research, University of Louisville, Louisville, KY, 40292, USA.

出版信息

Sci Rep. 2018 Jan 8;8(1):64. doi: 10.1038/s41598-017-18411-w.

Abstract

We describe the coupled straintronic-photothermic effect where coupling between bandgap of the 2D layered semiconductor under localized strains, optical absorption and the photo-thermal effect results in a large chromatic mechanical response in TMD-nanocomposites. Under the irradiation of visible light (405 nm to 808 nm), such locally strained atomic thin films based on 2H-MoS embedded in an elastomer such as poly (dimethyl) siloxane matrix exhibited a large amplitude of photo-thermal actuation compared to their unstrained counterparts. Moreover, the locally strain engineered nanocomposites showed tunable mechanical response giving rise to higher mechanical stress at lower photon energies. Scanning photoluminescence spectroscopy revealed a change in bandgap of 30 meV between regions encompassing highly strained compared to the unstrained few layers. For 1.6% change in the bandgap, the macroscopic photo-thermal response increased by a factor of two. Millimeter scale bending actuators based on the locally strained 2H-MoS resulted in significantly enhanced photo-thermal actuation displacements compared to their unstrained counterparts at lower photon energies and operated up to 30 Hz. Almost 1 mN photo-activated force was obtained at 50 mW and provided long-term stability. This study demonstrates a new mechanism in TMD-nanocomposites that would be useful for developing broad range of transducers.

摘要

我们描述了一种应变电子-光热耦合效应,其中 2D 层状半导体在局域应变、光吸收和光热效应之间的耦合导致 TMD 纳米复合材料产生大的颜色机械响应。在可见光(405nm 至 808nm)照射下,与未受应变的对应物相比,嵌入聚二甲基硅氧烷等弹性体中的 2H-MoS 基原子薄片中的局部应变表现出较大的光热致动幅度。此外,局部应变工程纳米复合材料表现出可调谐的机械响应,在较低的光子能量下产生更高的机械应力。扫描光致发光光谱显示,在包含高度应变的区域与未应变的少数层之间,带隙变化了 30meV。对于带隙 1.6%的变化,宏观光热响应增加了一倍。基于局部应变 2H-MoS 的毫米级弯曲致动器在较低的光子能量下与未应变的对应物相比,表现出显著增强的光热致动位移,并且可以运行高达 30Hz。在 50mW 时获得了近 1mN 的光激活力,并提供了长期稳定性。这项研究展示了 TMD 纳米复合材料中的一种新机制,对于开发广泛的换能器将非常有用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0b91/5758642/4d4bdd295ab6/41598_2017_18411_Fig2_HTML.jpg

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