Yang Minhao, Zhao Hang, Hu Chaohe, Haghi-Ashtiani Paul, He Delong, Dang Zhi-Min, Bai Jinbo
Laboratoire de Mécanique des Sols, Structures et Matériaux, CNRS UMR 8579, Centrale-Supélec, Université Paris-Saclay, 3 Rue Joliot Curie, Gif-sur-Yvette, 91190, France.
Phys Chem Chem Phys. 2018 Jan 24;20(4):2777-2786. doi: 10.1039/c7cp06510h.
Core-shell structured TiO@carbon nanowire (TiO@C NW) hybrids with different carbon shell thicknesses were synthesized by a combination of a hydrothermal reaction and the chemical vapor deposition (CVD) method. Pristine TiO NWs with a high aspect ratio were obtained by a hydrothermal reaction and the as-synthesized TiO NWs were subsequently employed as the template for carbon shell deposition during the CVD procedure. The obtained TiO@C NW hybrids have a uniform carbon shell and the thickness of the carbon shell could be precisely designed from 4 nm to 40 nm by controlling the deposition time. With the help of solution and melt blending methods, the TiO@C NW hybrids were subsequently incorporated into the PVDF matrix to fabricate TiO@C NWs/PVDF nanocomposites, which exhibit a similar percolative dielectric behavior to that reported in other percolative nanocomposites. Moreover, the dielectric properties of the TiO@C NWs/PVDF nanocomposites could be accurately adjusted by tuning the carbon shell thickness of the TiO@C NW hybrids. The highest dielectric constant (2171) of the TiO@C NWs/PVDF nanocomposites is 80 times larger than those of the pristine TiO-filled ones at the same filler loading, and 241 times higher than that of the pure PVDF matrix. The enhanced dielectric performance could be attributed to the improved interfacial polarizations of TiO/C and C/PVDF interfaces. This approach provides an interesting alternative to fabricate high-performance dielectric nanocomposites for practical applications in the electronic industry.
通过水热反应和化学气相沉积(CVD)方法相结合,合成了具有不同碳壳厚度的核壳结构TiO@碳纳米线(TiO@C NW)杂化物。通过水热反应获得了具有高纵横比的原始TiO纳米线,随后将合成的TiO纳米线用作CVD过程中碳壳沉积的模板。所获得的TiO@C NW杂化物具有均匀的碳壳,并且通过控制沉积时间,可以将碳壳的厚度精确设计为4nm至40nm。借助溶液和熔体共混方法,随后将TiO@C NW杂化物掺入PVDF基体中,以制备TiO@C NWs/PVDF纳米复合材料,该复合材料表现出与其他渗流纳米复合材料中报道的类似的渗流介电行为。此外,通过调节TiO@C NW杂化物的碳壳厚度,可以精确调整TiO@C NWs/PVDF纳米复合材料的介电性能。在相同的填料负载量下,TiO@C NWs/PVDF纳米复合材料的最高介电常数(2171)比原始TiO填充的复合材料高80倍,比纯PVDF基体高241倍。介电性能的增强可归因于TiO/C和C/PVDF界面处界面极化的改善。这种方法为制造用于电子工业实际应用的高性能介电纳米复合材料提供了一种有趣的替代方案。